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PDF APM1403S Data sheet ( Hoja de datos )

Número de pieza APM1403S
Descripción P-Channel Enhancement Mode MOSFET
Fabricantes Anpec Electronics Coropration 
Logotipo Anpec Electronics Coropration Logotipo



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No Preview Available ! APM1403S Hoja de datos, Descripción, Manual

APM1403S
Features
-20V/-0.8A ,
RDS(ON)=160m(typ.) @ VGS=-4.5V
RDS(ON)=190m(typ.) @ VGS=-2.5V
Super High Dense Cell Design
www.DataSheet4U.com Reliable and Rugged
SC-70 Package
Lead Free Available (RoHS Compliant)
P-Channel Enhancement Mode MOSFET
Pin Description
Top View of SC-70
S
Applications
Power Management in Notebook Computer,
Portable Equipment and Battery Powered
Systems
G
D
P-Channel MOSFET
Ordering and Marking Information
APM1403
Lead Free Code
Handling Code
Temp. Range
Package Code
Package Code
S : SC-70
Operating Junction Temp. Range
C : -55 to 150°C
Handling Code
TR : Tape & Reel
Lead Free Code
L : Lead Free Device Blank : Original Device
APM1403 S :
03
Note: ANPEC lead-free products contain molding compounds/die attach materials and 100% matte in plate termina-
tion finish; which are fully compliant with RoHS and compatible with both SnPb and lead-free soldiering operations.
ANPEC lead-free products meet or exceed the lead-free requirements of IPC/JEDEC J STD-020C for MSL classifica-
tion at lead-free peak reflow temperature.
ANPEC reserves the right to make changes to improve reliability or manufacturability without notice, and advise
customers to obtain the latest version of relevant information to verify before placing orders.
Copyright ANPEC Electronics Corp.
Rev. B.2 - Mar., 2005
1
www.anpec.com.tw

1 page




APM1403S pdf
APM1403S
Typical Characteristics (Cont.)
www.DataSheet4U.com
Output Characteristics
4.0
V = -3, -4, -5, -6, -7, -8, -9, -10V
GS
3.5
-2V
3.0
2.5
2.0
1.5
-1.5V
1.0
0.5
-1V
0.0
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
-VDS - Drain - Source Voltage (V)
Drain-Source On Resistance
0.30
0.27
0.24
0.21
V = -2.5V
GS
0.18
0.15
V = -4.5V
GS
0.12
0.09
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
-ID - Drain Current (A)
Transfer Characteristics
4.0
3.5
3.0
2.5
2.0
1.5
T =125oC
j
1.0
T =25oC
j
0.5
T =-55oC
j
0.0
0.0 0.5 1.0 1.5 2.0 2.5 3.0
-VGS - Gate - Source Voltage (V)
Gate Threshold Voltage
1.75
1.50
I
DS
=
-250µA
1.25
1.00
0.75
0.50
0.25
0.00
-50 -25 0 25 50 75 100 125 150
Tj - Junction Temperature (°C)
Copyright ANPEC Electronics Corp.
Rev. B.2 - Mar., 2005
5
www.anpec.com.tw

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