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PDF AO4427 Data sheet ( Hoja de datos )
| Número de pieza | AO4427 | |
| Descripción | P-Channel Enhancement Mode Field Effect Transistor | |
| Fabricantes | Alpha & Omega Semiconductors | |
| Logotipo |  |
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AO4427
P-Channel Enhancement Mode Field Effect Transistor
General Description
The AO4427 uses advanced trench technology to
www.DataSheet4pUr.ocovmide excellent RDS(ON), and ultra-low low gate
charge with a 25V gate rating. This device is suitable
for use as a load switch or in PWM applications. The
device is ESD protected. Standard Product AO4427
is Pb-free (meets ROHS & Sony 259 specifications).
AO4427L is a Green Product ordering option.
AO4427 and AO4427L are electrically identical
Features
VDS (V) = -30V
ID = -12.5 A (VGS = -20V)
RDS(ON) < 12mΩ (VGS = -20V)
RDS(ON) < 14mΩ (VGS = -10V)
ESD Rating: 2KV HBM
SOIC-8
Top View
SD
SD
SD
GD
D
G
S
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain
TA=25°C
Current A
TA=70°C
Pulsed Drain Current B
ID
IDM
TA=25°C
Power Dissipation A TA=70°C
PD
Junction and Storage Temperature Range TJ, TSTG
Maximum
-30
±25
-12.5
-10.5
-60
3
2.1
-55 to 150
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A
Maximum Junction-to-Lead C
t ≤ 10s
Steady-State
Steady-State
Symbol
RθJA
RθJL
Typ
28
54
21
Max
40
75
30
Units
V
V
A
W
°C
Units
°C/W
°C/W
°C/W
Alpha & Omega Semiconductor, Ltd.
1 page | ||
| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet AO4427.PDF ] | |
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