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PDF AO4413A Data sheet ( Hoja de datos )
| Número de pieza | AO4413A | |
| Descripción | P-Channel Enhancement Mode Field Effect Transistor | |
| Fabricantes | Alpha & Omega Semiconductors | |
| Logotipo |  |
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AO4413A
P-Channel Enhancement Mode Field Effect Transistor
General Description
The AO4413A uses advanced trench technology to
www.DataSheet4pUr.ocovmide excellent RDS(ON), and ultra-low low gate
charge with a 25V gate rating. This device is suitable
for use as a load switch or in PWM applications.
Standard product AO4413A is Pb-free (meets ROHS
& Sony 259 specifications). AO4413AL is a Green
Product ordering option. AO4413A and AO4413AL
are electrically identical.
Features
VDS (V) = -30V
ID = -15A
(VGS = -10V)
RDS(ON) < 7mΩ (VGS = -20V)
RDS(ON) < 8.5mΩ (VGS = -10V)
SOIC-8
Top View
SD
SD
SD
GD
D
G
S
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain
TA=25°C
Current A
TA=70°C
Pulsed Drain Current B
ID
IDM
TA=25°C
Power Dissipation A TA=70°C
PD
Junction and Storage Temperature Range TJ, TSTG
Maximum
-30
±25
-15
-12.8
-80
3
2.1
-55 to 150
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A
Maximum Junction-to-Lead C
t ≤ 10s
Steady-State
Steady-State
Symbol
RθJA
RθJL
Typ
32
62
18
Max
40
75
24
Units
V
V
A
W
°C
Units
°C/W
°C/W
°C/W
Alpha & Omega Semiconductor, Ltd.
1 page | ||
| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet AO4413A.PDF ] | |
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