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Teilenummer | DPAD |
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Beschreibung | MONOLITHIC DUAL PICO AMPERE DIODES | |
Hersteller | Linear Integrated Systems | |
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Gesamt 2 Seiten Linear Integrated Systems
FEATURES
Direct Replacement For SILICONIX DPAD SERIES
HIGH ON ISOLATION
20fA
EXCELLENT CAPACITANCE MATCHING
ABSOLUTE MAXIMUM RATINGS1
∆CR ≤ 0.2pF
www.DataShee@t4U2.c5o°mC (unless otherwise stated)
Maximum Temperatures
Storage Temperature
-65 to +150 °C
Operating Junction Temperature
-55 to +135 °C
Maximum Power Dissipation
Continuous Power Dissipation (DPAD)
500mW
Maximum Currents
Forward Current (DPAD)
50mA
DPAD SERIES
MONOLITHIC DUAL
PICO AMPERE DIODES
DPAD
TO-72
BOTTOM VIEW
A1 3 5 A2
DPAD1
TO-78
BOTTOM VIEW
C
4
A1 3
5 K2
K1 1 7 K2
K1 1
SSTDPAD
SOIC
K1 1
K1 2
A1 3
NC 4
8 K2
7 K2
6 A2
5 NC
7 A2
COMMON ELECTRICAL CHARACTERISTICS @ 25 °C (unless otherwise stated)
SYMBOL CHARACTERISTIC
MIN TYP MAX
BVR
Reverse Breakdown
Voltage
DPAD1
DPAD2,5,10,20,50,100
SSTDPAD5,50,100
-45
-45
-30
VF
|CR1-CR2|
Forward Voltage
Differential Capacitance
(∆CR)
DPAD1
ALL OTHERS
0.8 1.5
0.2
0.5
DPAD1
0.8
Crss Total Reverse Capacitance DPAD2,5,10,20,50,100
2.0
SSTDPAD5,50,100
4.0
UNITS
V
pF
CONDITIONS
IR = -1µA
IF = 1mA
VR1 = VR2 = -5V, f = 1MHz
VR = -5V, f = 1MHz
SPECIFIC ELECTRICAL CHARACTERISTICS @ 25 °C (unless otherwise stated)
SYMBOL CHARACTERISTIC
DPAD2
SSTDPAD2
(SST)DPAD1
-1
(SST)DPAD2
-2
IR
Maximum Reverse
Leakage Current2
(SST)DPAD5
(SST)DPAD10
(SST)DPAD20
-5
-10
-20
-5
(SST)DPAD50
-50
-50
(SST)DPAD100
-100
-100
UNITS CONDITIONS
pA VR = -20V
Linear Integrated Systems • 4042 Clipper Court • Fremont, CA 94538 • Tel: 510 490-9160 • Fax: 510 353-0261
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Seiten | Gesamt 2 Seiten | |
PDF Download | [ DPAD Schematic.PDF ] |
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