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Teilenummer | DG2012 |
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Beschreibung | Low-Voltage Single SPDT Analog Switch | |
Hersteller | Vishay Siliconix | |
Logo | ||
Gesamt 8 Seiten New Product
DG2012
Vishay Siliconix
Low-Voltage Single SPDT Analog Switch
FEATURES
BENEFITS
D Low Voltage Operation (1.8 V to 5.5 V)
D Low On-Resistance - rDS(on): 1 W Typ.
D Fast Switching - tON : 17 ns, tOFF: 13 ns
D Low Leakage
D TTL/CMOS Compatible
www.DataSheeDt4U6.-cPomin SC-70 Package
D Reduced Power Consumption
D Simple Logic Interface
D High Accuracy
D Reduce Board Space
APPLICATIONS
D Cellular Phones
D Communication Systems
D Portable Test Equipment
D Battery Operated Systems
D Sample and Hold Circuits
DESCRIPTION
The DG2012 is a single-pole/double-throw monolithic CMOS
analog switch designed for high performance switching of
analog signals. Combining low power, high speed (tON: 17 ns,
tOFF: 13 ns), low on-resistance (rDS(on): 1 W) and small
physical size (SC70), the DG2012 is ideal for portable and
battery powered applications requiring high performance and
efficient use of board space.
The DG2012 is built on Vishay Siliconix’s low voltage
submicron CMOS process. An epitaxial layer prevents
latchup. Break-before -make is guaranteed for DG2012.
Each switch conducts equally well in both directions when on,
and blocks up to the power supply level when off.
FUNCTIONAL BLOCK DIAGRAM AND PIN CONFIGURATION
IN
V+
GND
1
2
3
SC-70
6 NO (Source1)
5 COM
4 NC (Source2)
Top View
Device Marking: E7xx
Logic
0
1
TRUTH TABLE
NC
ON
OFF
NO
OFF
ON
ORDERING INFORMATION
Temp Range
-40 to 85°C
Package
SC70-6
Part Number
DG2012DL
Document Number: 72176
S-03723—Rev. A, 07-Apr-03
www.vishay.com
1
DG2012
Vishay Siliconix
New Product
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Switching Time vs. Temperature and Supply Voltage
50
45 tON V+ = 2 V
40
35
30 tON V+ = 3 V
25
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20
15
10
tOFF V+ = 2 V
tOFF V+ = 3 V
tON V+ = 5 V
tOFF V+ = 5 V
5
0
-60 -40 -20
0
20 40 60 80 100
Temperature (_C)
Insertion Loss, Off-Isolation, Crosstalk vs. Frequency
10
0
-10 LOSS
- 20
- 30
- 40
OIRR
- 50
- 60
XTALK
V+ = 5 V
RL = 50 W
- 70
- 80
- 90
100 K
1M
10 M
100 M
Frequency (Hz)
1G
Switching Threshold vs. Supply Voltage
3.0
2.5
2.0
1.5
1.0
0.5
0.0
01234567
V+ - Supply Voltage (V)
Charge Injection vs. Analog Voltage
30
20
10 V+ = 3 V
V+ = 5 V
0
V+ = 2 V
- 10
- 20
- 30
0
1234
VCOM - Analog Voltage (v)
5
6
www.vishay.com
6
Document Number: 72176
S-03723—Rev. A, 07-Apr-03
6 Page | ||
Seiten | Gesamt 8 Seiten | |
PDF Download | [ DG2012 Schematic.PDF ] |
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