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C5859 Schematic ( PDF Datasheet ) - Toshiba Semiconductor

Teilenummer C5859
Beschreibung NPN Transistor - 2SC5859
Hersteller Toshiba Semiconductor
Logo Toshiba Semiconductor Logo 




Gesamt 5 Seiten
C5859 Datasheet, Funktion
2SC5859
TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED MESA TYPE
2SC5859
HORIZONTAL DEFLECTION OUTPUT FOR
HDTV, DIGITAL TV, PROJECTION TV
Unit: mm
High Voltage
Low Saturation Voltage
High Speed
: VCBO = 1700 V
: VCE (sat) = 3 V (max)
: tf(2) = 0.1 µs (Typ.)
www.DataSheet4U.com
MAXIMUM RATINGS (Tc = 25°C)
CHARACTERISTIC
CollectorBase Voltage
CollectorEmitter Voltage
EmitterBase Voltage
Collector Current
DC
Pulse
Base Current
Collector Power Dissipation
Junction Temperature
Storage Temperature Range
SYMBOL
VCBO
VCEO
VEBO
IC
ICP
IB
PC
Tj
Tstg
RATING
1700
750
5
23
46
11.5
210
150
55~150
UNIT
V
V
V
A
A
W
°C
°C
ELECTRICAL CHARACTERISTICS (Tc = 25°C)
CHARACTERISTIC
SYMBOL
TEST CONDITION
Collector Cutoff Current
Emitter Cutoff Current
Collector Emitter Breakdown Voltage
DC Current Gain
CollectorEmitter Saturation Voltage
BaseEmitter Saturation Voltage
Transition Frequency
Collector Output Capacitance
Storage Time
Switching Time
Fall Time
Storage Time
Fall Time
ICBO
IEBO
V (BR) CEO
hFE (1)
hFE (2)
hFE (3)
VCE (sat)
VBE (sat)
fT
Cob
tstg(1)
tf(1)
tstg(2)
tf(2)
VCB = 1700 V, IE = 0
VEB = 5 V, IC = 0
IC = 10 mA, IB = 0
VCE = 5 V, IC = 2 A
VCE = 5 V, IC = 8 A
VCE = 5 V, IC = 18 A
IC = 18 A, IB = 4.5 A
IC = 18 A, IB = 4.5 A
VCE = 10 V, IC = 0.1 A
VCB = 10 V, IE = 0, f = 1 MHz
ICP = 8 A , IB1 (end) = 1 A
fH = 32 kHz
ICP = 7.5 A, IB1 (end) = 1 A
fH = 100 kHz
JEDEC
JEITA
TOSHIBA
2-21F2A
Weight: 9.75 g (typ.)
Min Typ. Max UNIT
――
1 mA
― ― 100 µA
750
V
20 55
10 22
4.5
8
――
3
V
1.0 1.5
V
2 MHz
320
pF
4
0.15
µs
1.8
0.1
µs
1 2004-5-18





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