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PDF D1963 Data sheet ( Hoja de datos )
| Número de pieza | D1963 | |
| Descripción | NPN Transistor - 2SD1963 | |
| Fabricantes | ROHM Electronics | |
| Logotipo |  |
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Transistors
Power transistor (50V, 3A)
2SD1963
2SD1963
zFeatures
1) Low saturation voltage, typically
www.DataSheet4U.com VCE(sat) = −0.45V (Max.) at IC/IB = −1.5A / −0.15A.
2) Excellent DC current gain characteristics.
3) Complements the 2SB1308.
zExternal dimensions (Unit : mm)
MPT3
4.5
1.6
1.5
zAbsolute maximum ratings (Ta=25°C)
Parameter
Symbol
Limits
Collector-base voltage
VCBO
50
Collector-emitter voltage
VCEO
20
Emitter-base voltage
VEBO
6
Collector current
3
IC
5
Collector power dissipation
Junction temperature
PC
Tj
0.5
2.0
150
Storage temperature
Tstg
−55 to 150
∗1 Single pulse, Pw=10ms
∗2 When mounted on a 40×40×0.7mm ceramic board.
(1)Base
(2)Collector
(3)Emitter
(1) (2)
(3)
0.4 0.5 0.4
1.5 1.5
3.0
Unit
V
V
V
A(DC)
A(Pulse) ∗1
W
W ∗2
°C
°C
0.4
zElectrical characteristics (Ta=25°C)
Parameter
Symbol Min.
Collector-base breakdown voltage BVCBO 50
Collector-emitter breakdown voltage BVCEO 20
Emitter-base breakdown voltage
BVEBO
6
Collector cutoff current
ICBO
−
Emitter cutoff current
IEBO
−
DC current transfer ratio
hFE 180
Collector-emitter saturation voltage
Transition frequency
Output capacitance
∗ Measured using pulse current.
VCE(sat)
fT
Cob
−
−
−
Typ.
−
−
−
−
−
−
0.25
150
35
Max.
−
−
−
0.5
0.5
560
0.45
−
−
Unit
V
V
V
µA
µA
−
V
MHz
pF
Conditions
IC=50µA
IC= 1mA
IE= 50µA
VCB=40V
VEB=5V
VCE=2V, IC=0.5A
IC/IB=1.5A/ 0.15A
∗
∗
VCE=6V, IE= −50mA, f=100MHz
VCB=20V, IE=0A, f=1MHz
Rev.A
1/2
1 page | ||
| Páginas | Total 3 Páginas | |
| PDF Descargar | [ Datasheet D1963.PDF ] | |
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