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DE150-501N04A Schematic ( PDF Datasheet ) - Directed Energy

Teilenummer DE150-501N04A
Beschreibung RF Power MOSFET
Hersteller Directed Energy
Logo Directed Energy Logo 




Gesamt 3 Seiten
DE150-501N04A Datasheet, Funktion
Directed Energy, Inc.
An IXYS Company
N-Channel Enhancement Mode
Avalanche Rated
Low Qg and Rg
High dv/dt
Nanosecond Switching
DE150-501N04A
RF Power MOSFET
Preliminary Data Sheet
VDSS
ID25
RDS(on)
=
=
=
500 V
4.5 A
1.5
Symbol Test Conditions
Maximum Ratings
PDHS
=
80W
VDSS
www.DataSheet4U.coVmDGR
VGS
VGSM
ID25
IDM
IAR
EAR
dv/dt
PDHS
PDAMB
TJ
TJM
Tstg
TL
Weight
Symbol
VDSS
VGS(th)
IGSS
IDSS
RDS(on)
gfs
TJ = 25°C to 150°C
500 V
TJ = 25°C to 150°C; RGS = 1 M
500 V
Continuous
±20 V
Transient
±30 V
Tc = 25°C
4.5 A
Tc = 25°C, pulse width limited by TJM
27 A
Tc = 25°C
4.5 A
Tc = 25°C
- mJ
IS IDM, di/dt 100A/µs, VDD VDSS,
Tj 150°C, RG = 0.2
IS = 0
Tc = 25°C
Derate 4.4W/°C above 25°C
Tc = 25°C
3.5 V/ns
>200 V/ns
80 W GATE
3.5 W
DRAIN
-55…+150
150
°C
°C
SG1 SG2
SD1 SD2
1.6mm (0.063 in) from case for 10 s
-55…+150
300
2
°C
°C
g
Test Conditions
Characteristic Values
TJ = 25°C unless otherwise specified
min.
typ. max.
VGS = 0 V, ID = 3 ma
500
V
VDS = VGS, ID = 4 ma
2 3 4V
VGS = ±20 VDC, VDS = 0
±100 nA
VDS = 0.8 VDSS TJ = 25°C
VGS = 0
TJ = 125°C
25 µA
250 µA
VGS = 15 V, ID = 0.5ID25
Pulse test, t 300µS, duty cycle d 2%
1.5
VDS = 15 V, ID = 0.5ID25, pulse test
2.7 4.0
S
Features
Isolated Substrate
high isolation voltage (>2500V)
excellent thermal transfer
Increased temperature and power
cycling capability
IXYS advanced low Qg process
Low gate charge and capacitances
easier to drive
faster switching
Low RDS(on)
Very low insertion inductance (<2nH)
No beryllium oxide (BeO) or other
hazardous materials
Advantages
Optimized for RF and high speed
switching at frequencies to >100MHz
Easy to mount—no insulators needed
High power density





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