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Número de pieza | DE150-201N09A | |
Descripción | RF Power MOSFET | |
Fabricantes | Directed Energy | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de DE150-201N09A (archivo pdf) en la parte inferior de esta página. Total 3 Páginas | ||
No Preview Available ! Directed Energy, Inc.
An IXYS Company
N-Channel Enhancement Mode
Avalanche Rated
Low Qg and Rg
High dv/dt
Nanosecond Switching
DE150-201N09A
RF Power MOSFET
Preliminary Data Sheet
VDSS
ID25
RDS(on)
=
=
=
200 V
9.0 A
0.4 Ω
Symbol Test Conditions
Maximum Ratings
PDHS
=
80W
VDSS
www.DataSheet4U.coVmDGR
VGS
VGSM
ID25
IDM
IAR
EAR
dv/dt
PDHS
PDAMB
TJ
TJM
Tstg
TL
Weight
Symbol
VDSS
VGS(th)
IGSS
IDSS
RDS(on)
gfs
TJ = 25°C to 150°C
200 V
TJ = 25°C to 150°C; RGS = 1 MΩ
200 V
Continuous
±20 V
Transient
±30 V
Tc = 25°C
9.0 A
Tc = 25°C, pulse width limited by TJM
54 A
Tc = 25°C
9.0 A
Tc = 25°C
7.5 mJ
IS ≤ IDM, di/dt ≤ 100A/µs, VDD ≤ VDSS,
Tj ≤ 150°C, RG = 0.2Ω
IS = 0
Tc = 25°C
Derate 4.4W/°C above 25°C
Tc = 25°C
5 V/ns
>200 V/ns
80 W GATE
3.5 W
DRAIN
-55…+150
150
°C
°C
SG1 SG2
SD1 SD2
1.6mm (0.063 in) from case for 10 s
-55…+150
300
2
°C
°C
g
Test Conditions
Characteristic Values
TJ = 25°C unless otherwise specified
min.
typ. max.
VGS = 0 V, ID = 3 ma
200
V
VDS = VGS, ID = 4 ma
2 3 4V
VGS = ±20 VDC, VDS = 0
±100 nA
VDS = 0.8 VDSS TJ = 25°C
VGS = 0
TJ = 125°C
25 µA
250 µA
VGS = 15 V, ID = 0.5ID25
Pulse test, t ≤ 300µS, duty cycle d ≤ 2%
0.4 Ω
VDS = 15 V, ID = 0.5ID25, pulse test
3.0 5.0
S
Features
• Isolated Substrate
− high isolation voltage (>2500V)
− excellent thermal transfer
− Increased temperature and power
cycling capability
• IXYS advanced low Qg process
• Low gate charge and capacitances
− easier to drive
− faster switching
• Low RDS(on)
• Very low insertion inductance (<2nH)
• No beryllium oxide (BeO) or other
hazardous materials
Advantages
• Optimized for RF and high speed
switching at frequencies to >100MHz
• Easy to mount—no insulators needed
• High power density
1 page |
Páginas | Total 3 Páginas | |
PDF Descargar | [ Datasheet DE150-201N09A.PDF ] |
Número de pieza | Descripción | Fabricantes |
DE150-201N09A | RF Power MOSFET | Directed Energy |
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