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PDF EM641FP16 Data sheet ( Hoja de datos )
| Número de pieza | EM641FP16 | |
| Descripción | 256K x16 bit Low Power and Low Voltage Full CMOS Static RAM | |
| Fabricantes | Emerging Memory & Logic Solutions | |
| Logotipo |  |
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merging Memory & Logic Solutions Inc.
Document Title
256K x16 bit Low Power and Low Voltage Full CMOS Static RAM
Revision History
Revision No.
0.0
www.DataSheet4U.com
0.1
History
Initial Draft
2’nd Draft
0.2 3’rd Draft
0.3 4’th Draft
Changed Icc, Icc1 value
Changed ISB1 test conditions,
Changed VDR & IDR
measurement condition
Add Pb-free part number
EM641FP16 Series
Low Power, 256Kx16 SRAM
Draft Date
October 24 , 2002
November 11 , 2002
December 23 , 2002
Remark
Preliminary
February 13 , 2004
Emerging Memory & Logic Solutions Inc.
IT Venture Tower Eastside 11F, 78, Karac-Dong, Songpa-Ku, Seoul, Rep.of Korea Zip Code : 138-160
Tel : +82-2-2142-1759~1766 Fax : +82-2-2142-1769 / Homepage : www.emlsi.com
The attached datasheets are provided by EMLSI reserve the right to change the specifications and products. EMLSI will answer to your
questions about device. If you have any questions, please contact the EMLSI office.
1
1 page  
merging Memory & Logic Solutions Inc.
EM641FP16 Series
Low Power, 256Kx16 SRAM
AC OPERATING CONDITIONS
Test Conditions (Test Load and Test Input/Output Reference)
Input Pulse Level : 0.2 to VCC-0.2V
Input Rise and Fall Time : 5ns
Input and Output reference Voltage : 0.9V
Output Load (See right) : CL = 100pF+ 1 TTL
CL1) = 30pF + 1 TTL
1. Including scope and Jig capacitance
www.DataShee2t4. UR.c1o=m3070 ohm , R2=3150 ohm
3. VTM=1.8V
CL1)
READ CYCLE (Vcc =1.65 to 2.2V, Gnd = 0V, TA = -40oC to +85oC)
Parameter
Symbol
70ns
Min
Read Cycle Time
tRC 70
Address Access Time
tAA -
Chip Select to output
tCO -
Output Enable to valid output
tOE -
UB, LB Acess time
tB A
Chip select to low-Z output
tLZ 10
UB, LB enable to low-Z output
tBLZ
10
Output Enable to Low-Z output
tOLZ
5
Chip disable to high-Z output
tHZ 0
UB, LB disable to high-Z output
tBHZ
0
Output disable to high-Z output
tOHZ
0
Output hold from address change
tOH 10
Max
-
70
70
35
70
-
-
-
25
25
25
-
WRITE CYCLE (Vcc =1.65 to 2.2V, Gnd = 0V, TA = -40oC to +85oC)
Parameter
Symbol
70ns
Min Max
Write Cycle Time
tWC 70 -
Chip Select to end of write
tCW 60 -
Address Setup time
tAs 0 -
Address valid to end of write
tAW 60 -
UB, LB valid to end of write
tBW 60 -
Write pulse width
tWP 55 -
Write recovery time
tWR 0 -
Write to ouput high-Z
tWHZ
0 25
Data to write time overlap
tDW 30
Data hold from write time
tDH 0 -
End write to output low-Z
tOW 5 -
5
VTM3)
R12)
R22)
Unit
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
Unit
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
5 Page 
merging Memory & Logic Solutions Inc.
EM641FP16 Series
Low Power, 256Kx16 SRAM
MEMORY FUNCTION GUIDE
EM X XX X X X XX X X - XX XX
1. EMLSI Memory
www.DataSheet4U2..coDmevice Type
3. Density
4. Option
5. Technology
6. Operating Voltage
1. Memory Component
2. Device Type
6 ------------------------ Low Power SRAM
7 ------------------------ Pseudo SRAM
3. Density
1 ------------------------- 1M
2 ------------------------- 2M
4 ------------------------- 4M
8 ------------------------- 8M
16 ----------------------- 16M
32 ----------------------- 32M
64 ----------------------- 64M
4. Option
0 ----------------------- Dual CS
1 ----------------------- Single CS
5. Technology
Blank ------------------ CMOS
F ------------------------ Full CMOS
6. Operating Voltage
Blank ------------------- 5V
V ------------------------- 3.3V
U ------------------------- 3.0V
S ------------------------- 2.5V
R ------------------------- 2.0V
P ------------------------- 1.8V
7. Orginzation
8 ---------------------- x8 bit
16 ---------------------- x16 bit
32 ---------------------- x32 bit
11. Power
10. Speed
9. Packages
8. Version
7. Orgainzation
8. Version
Blank ----------------- Mother die
A ----------------------- First version
B ----------------------- Second version
C ----------------------- Third version
D ----------------------- Fourth version
E ----------------------- Fifth version
9. Package
Blank ---------------------- Package
W --------------------- Wafer
10. Speed
45 ---------------------- 45ns
55 ---------------------- 55ns
70 ---------------------- 70ns
85 ---------------------- 85ns
10 --------------------- 100ns
12 --------------------- 120ns
11. Power
LL ---------------------- Low Low Power
LF ---------------------- Low Low Power(Pb-Free)
L ---------------------- Low Power
S ---------------------- Standard Power
11
11 Page | ||
| Páginas | Total 11 Páginas | |
| PDF Descargar | [ Datasheet EM641FP16.PDF ] | |
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