Datenblatt-pdf.com


EM640FV16FW Schematic ( PDF Datasheet ) - Emerging Memory & Logic Solutions

Teilenummer EM640FV16FW
Beschreibung 256K x16 bit Low Power and Low Voltage Full CMOS Static RAM
Hersteller Emerging Memory & Logic Solutions
Logo Emerging Memory & Logic Solutions Logo 




Gesamt 11 Seiten
EM640FV16FW Datasheet, Funktion
Document Title
256K x16 bit Low Power and Low Voltage Full CMOS Static RAM
Revision History
Revision No. History
0.0 Initial Draft
www.DataSheet4U.com
EM640FV16FW Series
Low Power, 256Kx16 SRAM
Draft Date
August 13 , 2003
Remark
Emerging Memory & Logic Solutions Inc.
4F Korea Construction Financial Cooperative B/D, 301-1 Yeon-Dong, Jeju-Si, Jeju-Do, Rep.of Korea Zip Code : 690-719
Tel : +82-64-740-1712 Fax : +82-64-740-1749~1750 / Homepage : www.emlsi.com
The attached data sheets are provided by EMLSI reserve the right to change the specifications and products. EMLSI will answer to your
questions about device. If you have any questions, please contact the EMLSI office.
1






EM640FV16FW Datasheet, Funktion
EM640FV16FW Series
Low Power, 256Kx16 SRAM
AC OPERATING CONDITIONS
Test Conditions (Test Load and Test Input/Output Reference)
Input Pulse Level : 0.4 to 2.2V
Input Rise and Fall Time : 5ns
Input and Output reference Voltage : 1.5V
Output Load (See right) : CL = 100pF+ 1 TTL
CL1) = 30pF + 1 TTL
1. Including scope and Jig capacitance
www.DataShee2t.4UR.c1o=m3070 ohm, R2=3150 ohm
3. VTM=2.8V
CL1)
READ CYCLE (Vcc =2.7 to 3.6V, Gnd = 0V, TA = -40oC to +85oC)
Parameter
Symbol
55ns
Min Max
Read cycle time
tRC 55 -
Address access time
tAA - 55
Chip select to output
tco1, tco2
- 55
Output enable to valid output
tOE - 30
UB, LB acess time
tBA 55
Chip select to low-Z output
tLZ1, tLZ2
10 -
UB, LB enable to low-Z output
tBLZ
10 -
Output enable to low-Z output
tOLZ
5-
Chip disable to high-Z output
tHZ1, tHZ2
0 20
UB, LB disable to high-Z output
tBHZ
0 20
Output disable to high-Z output
tOHZ
0 20
Output hold from address change
tOH 10 -
70ns
Min Max
70 -
- 70
- 70
- 35
70
10 -
10 -
5-
0 25
0 25
0 25
10 -
WRITE CYCLE (Vcc =2.7 to 3.6V, Gnd = 0V, TA = -40oC to +85oC)
Parameter
Symbol
55ns
Min Max
70ns
Min Max
Write cycle time
tWC 55 - 70 -
Chip select to end of write
tCW1, tCW2 45 - 60 -
Address setup time
tAs 0 - 0 -
Address valid to end of write
tAW 45 - 60 -
UB, LB valid to end of write
tBW 45 - 55 -
Write pulse width
tWP 40 - 50 -
Write recovery time
tWR 0 - 0 -
Write to ouput high-Z
tWHZ
0 20 0 25
Data to write time overlap
tDW 30
30
Data hold from write time
tDH 0 - 0 -
End write to output low-Z
tOW 5 - 5 -
VTM3)
R12)
R22)
Unit
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
Unit
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
6

6 Page







SeitenGesamt 11 Seiten
PDF Download[ EM640FV16FW Schematic.PDF ]

Link teilen




Besondere Datenblatt

TeilenummerBeschreibungHersteller
EM640FV16FW256K x16 bit Low Power and Low Voltage Full CMOS Static RAMEmerging Memory & Logic Solutions
Emerging Memory & Logic Solutions

TeilenummerBeschreibungHersteller
CD40175BC

Hex D-Type Flip-Flop / Quad D-Type Flip-Flop.

Fairchild Semiconductor
Fairchild Semiconductor
KTD1146

EPITAXIAL PLANAR NPN TRANSISTOR.

KEC
KEC


www.Datenblatt-PDF.com       |      2020       |      Kontakt     |      Suche