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PDF P80NF55-08 Data sheet ( Hoja de datos )
| Número de pieza | P80NF55-08 | |
| Descripción | STP80NF55-08 | |
| Fabricantes | STMicroelectronics | |
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STP80NF55-08
STB80NF55-08 STB80NF55-08-1
N-CHANNEL 55V - 0.0065 Ω - 80A D2PAK/I2PAK/TO-220
STripFET™ II POWER MOSFET
TYPE
VDSS RDS(on)
STB80NF55-08/-1
www.DataSheet4U.cSoTmP80NF55-08
55 V <0.008 Ω
55 V <0.008 Ω
s TYPICAL RDS(on) = 0.0065Ω
s LOW THRESHOLD DRIVE
ID
80 A
80 A
DESCRIPTION
This Power MOSFET is the latest development of
STMicroelectronis unique "Single Feature Size™"
strip-based process. The resulting transistor
shows extremely high packing density for low on-
resistance, rugged avalanche characteristics and
less critical alignment steps therefore a
remarkable manufacturing reproducibility.
APPLICATIONS
s SOLENOID AND RELAY DRIVERS
s MOTOR CONTROL, AUDIO AMPLIFIERS
s DC-DC CONVERTERS
s AUTOMOTIVE ENVIRONMENT
3
1
D2PAK
TO-263
123
I2PAK
TO-262
3
2
1
TO-220
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
VDS Drain-source Voltage (VGS = 0)
VDGR
Drain-gate Voltage (RGS = 20 kΩ)
VGS Gate- source Voltage
ID(•)
Drain Current (continuos) at TC = 25°C
ID Drain Current (continuos) at TC = 100°C
IDM(••) Drain Current (pulsed)
Ptot Total Dissipation at TC = 25°C
Derating Factor
EAS (1) Single Pulse Avalanche Energy
Tstg Storage Temperature
Tj Max. Operating Junction Temperature
(•) Current limited by package
(••) Pulse width limited by safe operating area.
March 2002
.
Value
55
55
± 20
80
57
320
300
2
870
-55 to 175
(1) Starting Tj = 25 oC, ID = 40A, VDD = 30V
Unit
V
V
V
A
A
A
W
W/°C
mJ
°C
1/11
1 page  
Normalized Gate Threshold Voltage vs Temperature
STB80NF55-08/-1 STP80NF55-08
Normalized on Resistance vs Temperature
www.DataSheet4U.com
Source-drain Diode Forward Characteristics
Normalized Breakdown Voltage vs Temperature.
..
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5 Page 
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STB80NF55-08/-1 STP80NF55-08
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences
of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted
by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject
to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not
authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
The ST logo is registered trademark of STMicroelectronics
® 2002 STMicroelectronics - All Rights Reserved
All other names are the property of their respective owners.
STMicroelectronics GROUP OF COMPANIES
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Singapore - Spain - Sweden - Switzerland - United Kingdom - United States.
http://www.st.com
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