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PDF W20NC50 Data sheet ( Hoja de datos )
| Número de pieza | W20NC50 | |
| Descripción | STW20NC50 | |
| Fabricantes | STMicroelectronics | |
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Hay una vista previa y un enlace de descarga de W20NC50 (archivo pdf) en la parte inferior de esta página. Total 8 Páginas | ||
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STW20NC50
N-CHANNEL 500V - 0.22Ω - 18.4A TO-247
PowerMesh™II MOSFET
TYPE
VDSS
RDS(on)
ID
STW20NC50
500V < 0.27Ω 18.4A
www.DataSheet4Us.coTmYPICAL RDS(on) = 0.22Ω
s EXTREMELY HIGH dv/dt CAPABILITY
s 100% AVALANCHE TESTED
s NEW HIGH VOLTAGE BENCHMARK
s GATE CHARGE MINIMIZED
DESCRIPTION
The PowerMESH™II is the evolution of the first
generation of MESH OVERLAY™. The layout re-
finements introduced greatly improve the Ron*area
figure of merit while keeping the device at the lead-
ing edge for what concerns swithing speed, gate
charge and ruggedness.
3
2
1
TO-247
INTERNAL SCHEMATIC DIAGRAM
APPLICATIONS
s SWITH MODE LOW POWER SUPPLIES
(SMPS)
s HIGH CURRENT, HIGH SPEED SWITCHING
s DC-AC CONVERTERS FOR WELDING
EQUIPMENT AND UNINTERRUPTIBLE
POWER SUPPLIES AND MOTOR DRIVES
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
VDS Drain-source Voltage (VGS = 0)
VDGR
Drain-gate Voltage (RGS = 20 kΩ)
VGS Gate- source Voltage
ID Drain Current (continuos) at TC = 25°C
ID Drain Current (continuos) at TC = 100°C
IDM (q) Drain Current (pulsed)
PTOT
Total Dissipation at TC = 25°C
Derating Factor
dv/dt(1) Peak Diode Recovery voltage slope
Tstg Storage Temperature
Tj Max. Operating Junction Temperature
(•)Pulse width limited by safe operating area
May 2001
Value
500
500
±30
18.4
11.6
73.6
220
1.75
2
–65 to 150
150
Unit
V
V
V
A
A
A
W
W/°C
V/ns
°C
°C
(1)ISD ≤18.4A, di/dt ≤100A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX.
1/8
1 page  
STW20NC50
Normalized Gate Thereshold Voltage vs Temp. Normalized On Resistance vs Temperature
www.DataSheet4U.com
Source-drain Diode Forward Characteristics
5/8
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet W20NC50.PDF ] | |
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