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PDF AP4419GJ Data sheet ( Hoja de datos )
| Número de pieza | AP4419GJ | |
| Descripción | ENHANCEMENT MODE POWER MOSFET | |
| Fabricantes | Advanced Power Electronics | |
| Logotipo |  |
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Advanced Power
Electronics Corp.
▼ Lower On-resistance
▼ Simple Drive Requirement
www.DataSheet▼4U.cFoamst Switching Characteristic
▼ RoHS Compliant
G
AP4419GH/J
Pb Free Plating Product
P-CHANNEL ENHANCEMENT MODE
POWER MOSFET
D
BVDSS
-35V
RDS(ON)
38mΩ
ID -25A
S
Description
The TO-252 package is universally preferred for all commercial-
industrial surface mount applications and suited for low voltage
applications such as DC/DC converters. The through-hole version
(AP4419GJ) is available for low-profile applications.
GD
S TO-252(H)
G
D
S
TO-251(J)
Absolute Maximum Ratings
Symbol
Parameter
VDS
VGS
ID@TC=25℃
ID@TC=100℃
IDM
PD@TC=25℃
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current1
Total Power Dissipation
Linear Derating Factor
TSTG
TJ
Storage Temperature Range
Operating Junction Temperature Range
Thermal Data
Symbol
Parameter
Rthj-c
Thermal Resistance Junction-case
Rthj-a
Thermal Resistance Junction-ambient
Rating
-35
±20
-25
-16
-70
34.7
0.28
-55 to 150
-55 to 150
Units
V
V
A
A
A
W
W/℃
℃
℃
Max.
Max.
Value
3.6
110
Units
℃/W
℃/W
Data and specifications subject to change without notice
200428051-1/4
1 page | ||
| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet AP4419GJ.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| AP4419GH | ENHANCEMENT MODE POWER MOSFET | Advanced Power Electronics |
| AP4419GJ | ENHANCEMENT MODE POWER MOSFET | Advanced Power Electronics |
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