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Teilenummer | C3886A |
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Beschreibung | NPN Transistor - 2SC3886A | |
Hersteller | Toshiba Semiconductor | |
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Gesamt 3 Seiten Huandong Electronics
Silicon NPN Power Transistors
Product Specification
2SC3886A
DESCRIPTION
With TO-3P(H)IS package
High voltage ,high speed
APPLICATIONS
Horizontal deflection output for high
www.DataSheet4U.rceosmolution display
High speed switching regulator output
applications
PINNING
PIN
1
2
3
DESCRIPTION
Base
Collector
Emitter
Fig.1 simplified outline (TO-3P(H)IS) and symbol
Absolute maximum ratings (Ta=25 )
SYMBOL
PARAMETER
VCBO
Collector-base voltage
VCEO
Collector-emitter voltage
VEBO
Emitter-base voltage
IC Collector current
ICM Collector current-peak
IB Base current
PC Collector power dissipation
Tj Junction temperature
Tstg Storage temperature
CONDITIONS
Open emitter
Open base
Open collector
TC=25
VALUE
1500
600
5
8
15
4
50
150
-55~150
UNIT
V
V
V
A
A
A
W
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Seiten | Gesamt 3 Seiten | |
PDF Download | [ C3886A Schematic.PDF ] |
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