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PDF WTC2310 Data sheet ( Hoja de datos )
| Número de pieza | WTC2310 | |
| Descripción | Enhancement Mode Power MOSFET | |
| Fabricantes | Weitron Technology | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de WTC2310 (archivo pdf) en la parte inferior de esta página. Total 6 Páginas | ||
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N-Channel Enhancement
Mode Power MOSFET
3 DRAIN
1
GATE
Features:www.DataSheet4U.com
2
SOURCE
*Super High Dense Cell Design For Low RDS(ON)
RDS(ON)<90mΩ@VGS=10V
*Rugged and Reliable
*Simple Drive Requirement
*SOT-23 Package
WTC2310
DRAIN CURRENT
3 AMPERS
DRAIN SOUCE VOLTAGE
60 VOLTAGE
1
2
3
SOT-23
Maximum Ratings(TA=25℃ Unless Otherwise Specified)
Rating
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
Continuous Drain Current3 ,VGS@10V(TA
,VGS@10V(TA
Pulsed Drain Current1,2
VGS
ID
IDM
Total Power Dissipation(TA=25℃)
PD
Maximum Junction-ambient3
R JA
Operating Junction and Storage Temperature Range
TJ, Tstg
Value
60
±20
3.0
2.3
10
1.38
90
-55~+150
Unit
V
A
W
℃/W
℃
Device Marking
WT2310=2310
WEITRON
http:www.weitron.com.tw
1/6
05-May-05
1 page  
WTC2310
14
12 ID = 3A
VDS = 30V
10 VDS = 38V
VDS = 48V
8
6
www.DataSheet4U.com
4
2
0
03
6 9 12 15
QG , Total Gate Charge(nC)
Fig 7. Gate Charge Characteristics
1000 f = 1.0MHz
Ciss
100
Coss
Crss
0
1 5 9 13 17 21 25 29
VDS, Drain-to-Source Voltage(V)
Fig 8. Typical Capacitance Characteristics
100,000
1
Duty factor = 0.5
10,00
100us
1,000
1ms
0.100 10ms
0.010 TA = 25°C
Single Pulse
100ms
Is
DC
0.001
0.1
1 10 100
VDS , Drain-to-Source Voltage(V)
1000
Fig 9. Maximum Safe Operation Area
0.2
0.1
0.1
0.05
0.01
0.01
Single pulse
PDM
t
T
Duty factor = t / T
Peak Tj=PDM x R ju + Tu
R ja=270°C / W
0.001
0.0001
0.001
0.01 0.1
1
t, Pulse Width(s)
10
100 1000
Fig 10. Effective Transient Thermal Impedance
VDS
90%
10%
VGS
td(on) tr
td(off) tf
Fig 11. Switching Time Circuit
VG
4.5V
QGS
QG
QGD
Charge
Q
Fig.12 Gate Charge Waveform
WEITRON
http://www.weitron.com.tw
5/6
05-May-05
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet WTC2310.PDF ] | |
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