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WTC2309 Schematic ( PDF Datasheet ) - Weitron Technology

Teilenummer WTC2309
Beschreibung Enhancement Mode Power MOSFET
Hersteller Weitron Technology
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Gesamt 6 Seiten
WTC2309 Datasheet, Funktion
P-Channel Enhancement
Mode Power MOSFET
3 DRAIN
1
GATE
www.DataSheet4U.com
Features:
*Super High Dense Cell Design For Low RDS(ON)
R DS(ON) <75m Ω@V GS =-10V
*Rugged and Reliable
*Simple Drive Requirement
*SOT-23 Package
2
SOURCE
WTC2309
DRAIN CURRENT
-3.7 AMPERES
DRAIN SOURCE VOLTAGE
-30 VOLTAGE
1
2
3
SOT-23
Maximum Ratings(TA=25℃ Unless Otherwise Specified)
Rating
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
Continuous Drain Current 3 ,(TA=25˚C)
,(TA=70˚C)
VG S
ID
Pulsed Drain Current 1,2
Total Power Dissipation(TA=25˚C)
Maximum Thermal Resistance Junction-ambient 3
Operating Junction and Storage Temperature Range
IDM
PD
R θJA
TJ, Tstg
Value
-30
±20
-3.7
-3.0
-12
1.38
90
-55~+150
Unit
V
A
W
˚C/W
˚C
Device Marking
WTC2309=2309
WEITRON
http:www.weitron.com.tw
1/6
23-May-05






WTC2309 Datasheet, Funktion
WTC2309
SOT-23 Outline Dimension
www.DataSheet4U.com
E
A
TOP VIEW
BC
D
G
H
K
L
J
M
SOT-23
Dim Min
A 0.35
B 1.19
C 2.10
D 0.85
E 0.46
G 1.70
H 2.70
J 0.01
K 0.89
L 0.30
M 0.076
Max
0.51
1.40
3.00
1.05
1.00
2.10
3.10
0.13
1.10
0.61
0.25
WEITRON
http://www.weitron.com.tw
6/6
23-May-05

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