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PDF WTC2304 Data sheet ( Hoja de datos )
| Número de pieza | WTC2304 | |
| Descripción | Enhancement Mode Power MOSFET | |
| Fabricantes | Weitron Technology | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de WTC2304 (archivo pdf) en la parte inferior de esta página. Total 6 Páginas | ||
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WTC2304
N-Channel Enhancement
Mode Power MOSFET
P b Lead(Pb)-Free
1 GATE
3 DRAIN
DRAIN CURRENT
2.7 AMPERS
DRAIN SOUCE VOLTAGE
25 VOLTAGE
Features:www.DataSheet4U.com
*Super High Dense Cell Design For Low RDS(ON)
RDS(ON)<117mΩ @VGS=10V
*Rugged and Reliable
Application:
*Capable of 2.5V Gate Drive
*Simple Drive Requirement
*SOT-23 Package
2 SOURCE
1
2
3
SOT-23
Maximum Ratings(TA=25℃ Unless Otherwise Specified)
Rating
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
Continuous Drain Current3 ,VGS@4.5V(TA
,VGS@4.5V(TA
Pulsed Drain Current1,2
VGS
ID
IDM
Total Power Dissipation(TA=25℃)
PD
Maximum Junction-ambient3
R JA
Operating Junction and Storage Temperature Range
TJ, Tstg
Value
20
±12
3.2
2.6
10
1.38
90
-55~+150
Unit
V
A
W
℃/W
℃
Device Marking
WTC2302=2302
WEITRON
http:www.weitron.com.tw
1/6
09-May-05
1 page  
WTC2302
12 ID = 3.6A
VDS = 4.5V
10
8
6
www.DataSheet4U.com
4
2
0
02
4 6 8 10
QG , Total Gate Charge(nC)
Fig 7. Gate Charge Characteristics
1000 f = 1.0MHz
Ciss
100
Coss
Crss
0
1 5 9 13 17 21 25 29
VDS, Drain-to-Source Voltage(V)
Fig 8. Typical Capacitance Characteristics
100 1
Duty factor = 0.5
10
1ms
1
10ms
0.1
TA = 25°C
Single Pulse
100ms
Is
DC
0.01
0.1
1 10
VDS , Drain-to-Source Voltage(V)
100
Fig 9. Maximum Safe Operation Area
0.2
0.1
0.1
0.05
0.01
0.01
Single pulse
PDM
t
T
Duty factor = t / T
Peak Tj=PDM x R ju + Tu
R ja=270°C / W
0.001
0.0001
0.001
0.01 0.1
1
t, Pulse Width(s)
10
100 1000
Fig 10. Effective Transient Thermal Impedance
VDS
90%
10%
VGS
td(on) tr
td(off) tf
Fig 11. Switching Time Circuit
VG
4.5V
QGS
QG
QGD
Charge
Q
Fig.12 Gate Charge Waveform
WEITRON
http://www.weitron.com.tw
5/6
09-May-05
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet WTC2304.PDF ] | |
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