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Teilenummer | WTC2301 |
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Beschreibung | Enhancement Mode Power MOSFET | |
Hersteller | Weitron Technology | |
Logo | ||
Gesamt 6 Seiten WTC2301
P-Channel Enhancement
Mode Power MOSFET
P b Lead(Pb)-Free
1
GATE
Features:
*Super High Dense Cell Design For Low RDS(ON)
R DS(ON) <100mΩ@V GS =-4.5V
*Rugged and Reliable
*Simple Drive Requirement
*SOT-23 Package
3 DRAIN
2
SOURCE
Applications
*Power Management in Notebook Computer
*Portable Equipment
*Battery Powered System
DRAIN CURRENT
-2.3 AMPERES
DRAIN SOURCE VOLTAGE
-20 VOLTAGE
1
2
3
SOT-23
Maximum Ratings(TA=25℃ Unless Otherwise Specified)
Rating
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
Continuous Drain Current 3
Pulsed Drain Current 1,2
VG S
ID
IDM
Total Po wer Dis sipation(T A=25˚C)
(T A=75˚C)
PD
Maximum Junction-ambient3
Maximum Junction-case
Ambient Temperature
Case Temperature
RθJA
RθJC
Ta
Tc
wwOwp.eDraattaiSnhgeeJut4nUc.tcioomn Temperature Range
Storage Temperature Range
TJ
T stg
Value
-20
±8
-2.3
-8
0.9
0.57
140
100
150
150
150
-55~+150
Unit
V
A
A
W
˚C /W
˚C /W
˚C
˚C
˚C
˚C
Device Marking
WTC2301 = 01
WEITRON
http://www.weitron.com.tw
1/6
Rev.D 29-Mar-10
WTC2301
SOT-23 Outline Dimension
A
TOP VIEW
BC
D
EG
H
K
L
J
M
SOT-23
Dim Min
A 0.35
B 1.19
C 2.10
D 0.85
E 0.46
G 1.70
H 2.70
J 0.01
K 0.89
L 0.30
M 0.076
Max
0.51
1.40
3.00
1.05
1.00
2.10
3.10
0.13
1.10
0.61
0.25
www.DataSheet4U.com
WEITRON
http://www.weitron.com.tw
6/6
Rev.D 29-Mar-10
6 Page | ||
Seiten | Gesamt 6 Seiten | |
PDF Download | [ WTC2301 Schematic.PDF ] |
Teilenummer | Beschreibung | Hersteller |
WTC2301 | Enhancement Mode Power MOSFET | Weitron Technology |
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