|
|
PDF C3975 Data sheet ( Hoja de datos )
| Número de pieza | C3975 | |
| Descripción | NPN Transistor - 2SC3975 | |
| Fabricantes | Panasonic | |
| Logotipo |  |
|
Hay una vista previa y un enlace de descarga de C3975 (archivo pdf) en la parte inferior de esta página. Total 4 Páginas | ||
|
No Preview Available !
Power Transistors
2SC3975
Silicon NPN triple diffusion planar type
For high breakdown voltage high-speed switching
■ Features
• High-speed switching
• High collector-base voltage (Emitter open) VCBO
• Wide safe operation area
• Satisfactory linearity of forward current transfer ratio hFE
• Full-pack package which can be installed to the heat sink with one screw
www.DataSheet4U.com
■ Absolute Maximum Ratings TC = 25°C
Parameter
Symbol Rating
Collector-base voltage (Emitter open)
Collector-emitter voltage (E-B short)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Base current
Collector current
Peak collector current
Collector power dissipation
Junction temperature
Ta = 25°C
Storage temperature
VCBO
VCES
VCEO
VEBO
IB
IC
ICP
PC
Tj
Tstg
800
800
500
8
5
10
20
100
3.0
150
−55 to +150
Unit
V
V
V
V
A
A
A
W
°C
°C
15.0±0.3
11.0±0.2
Unit: mm
5.0±0.2
(3.2)
φ 3.2±0.1
2.0±0.2
1.1±0.1
2.0±0.1
0.6±0.2
5.45±0.3
10.9±0.5
123
1: Base
2: Collector
3: Emitter
EIAJ: SC-92
TOP-3F-A1 Package
■ Electrical Characteristics TC = 25°C ± 3°C
Parameter
Symbol
Conditions
Min Typ Max Unit
Collector-emitter voltage (Base open)
Collector-base cutoff current (Emitter open)
Emitter-base cutoff current (Collector open)
Forward current transfer ratio
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Turn-on time
Storage time
Fall time
VCEO
ICBO
IEBO
hFE1
hFE2
VCE(sat)
VBE(sat)
fT
ton
tstg
tf
IC = 10 mA, IB = 0
VCB = 800 V, IE = 0
VEB = 5 V, IC = 0
VCE = 5 V, IC = 0.1 A
VCE = 5 V, IC = 6 A
IC = 6 A, IB = 1.2 A
IC = 6 A, IB = 1.2 A
VCE = 10 V, IC = 0.5 A, f = 1 MHz
IC = 6 A
IB1 = 1.2 A, IB2 = −2.4 A
VCC = 200 V
500 V
100 µA
100 µA
15
8
1.0 V
1.5 V
20 MHz
1.0 µs
3.0 µs
0.3 µs
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
Publication date: January 2003
SJD00119BED
1
1 page | ||
| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet C3975.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| C397 | SILICON CONTROLLED RECTIFIER |  National Electronics |
| C397 | Thyristor SCR 1.4KV 8KA 3-Pin |  New Jersey Semiconductor |
| C3973 | NPN Transistor - 2SC3973 |  Panasonic Semiconductor |
| C3975 | NPN Transistor - 2SC3975 | Panasonic |
| Número de pieza | Descripción | Fabricantes |
| SLA6805M | High Voltage 3 phase Motor Driver IC. |
 Sanken |
| SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
 Analog Devices |
|
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |