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C1881 Schematic ( PDF Datasheet ) - Hitachi Semiconductor

Teilenummer C1881
Beschreibung NPN Transistor - 2SC1881
Hersteller Hitachi Semiconductor
Logo Hitachi Semiconductor Logo 




Gesamt 6 Seiten
C1881 Datasheet, Funktion
2SC1881(K)
Silicon NPN Triple Diffused
Application
High gain amplifier power switching
www.DataSheet4U.com
Outline
TO-220AB
2
1
23
1. Base
2. Collector
(Flange)
3. Emitter
Absolute Maximum Ratings (Ta = 25°C)
Item
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
Collector peak current
Collector power dissipation
Junction temperature
Storage temperature
Note: 1. Value at TC = 25°C.
Symbol
VCBO
VCEO
VEBO
IC
I C(peak)
PC * 1
Tj
Tstg
1
6.8 k
(Typ)
400
(Typ)
3
Ratings
60
60
7
3
6
30
150
–55 to +150
Unit
V
V
V
A
A
W
°C
°C






C1881 Datasheet, Funktion
Cautions
1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent,
copyright, trademark, or other intellectual property rights for information contained in this document.
Hitachi bears no responsibility for problems that may arise with third party’s rights, including
intellectual property rights, in connection with use of the information contained in this document.
2. Products and product specifications may be subject to change without notice. Confirm that you have
received the latest product standards or specifications before final design, purchase or use.
3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However,
contact Hitachi’s sales office before using the product in an application that demands especially high
quality and reliability or where its failure or malfunction may directly threaten human life or cause risk
of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation,
traffic, safety equipment or medical equipment for life support.
www.4D.ataDSehseiegtn4Uy.ocuormapplication so that the product is used within the ranges guaranteed by Hitachi particularly
for maximum rating, operating supply voltage range, heat radiation characteristics, installation
conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used
beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable
failure rates or failure modes in semiconductor devices and employ systemic measures such as fail-
safes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other
consequential damage due to operation of the Hitachi product.
5. This product is not designed to be radiation resistant.
6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without
written approval from Hitachi.
7. Contact Hitachi’s sales office for any questions regarding this document or Hitachi semiconductor
products.
Hitachi, Ltd.
Semiconductor & Integrated Circuits.
Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan
Tel: Tokyo (03) 3270-2111 Fax: (03) 3270-5109
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For further information write to:
Hitachi Semiconductor
(America) Inc.
179 East Tasman Drive,
San Jose,CA 95134
Tel: <1> (408) 433-1990
Fax: <1>(408) 433-0223
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Electronic components Group
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Germany
Tel: <49> (89) 9 9180-0
Fax: <49> (89) 9 29 30 00
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Tel: <44> (1628) 585000
Fax: <44> (1628) 778322
Hitachi Asia Pte. Ltd.
Hitachi Asia (Hong Kong) Ltd.
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Group III (Electronic Components)
Hitachi Tower
7/F., North Tower, World Finance Centre,
Singapore 049318
Harbour City, Canton Road, Tsim Sha Tsui,
Tel: 535-2100
Kowloon, Hong Kong
Fax: 535-1533
Tel: <852> (2) 735 9218
Fax: <852> (2) 730 0281
Hitachi Asia Ltd.
Telex: 40815 HITEC HX
Taipei Branch Office
3F, Hung Kuo Building. No.167,
Tun-Hwa North Road, Taipei (105)
Tel: <886> (2) 2718-3666
Fax: <886> (2) 2718-8180
Copyright ' Hitachi, Ltd., 1999. All rights reserved. Printed in Japan.

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