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EMC646SP16K Schematic ( PDF Datasheet ) - EMLSI

Teilenummer EMC646SP16K
Beschreibung 4Mx16 bit CellularRAM
Hersteller EMLSI
Logo EMLSI Logo 




Gesamt 52 Seiten
EMC646SP16K Datasheet, Funktion
Document Title
4Mx16 bit CellularRAM AD-MUX
Revision History
www.DataRSheeveits4iUo.cnomNo. History
0.0 Initial Draft
Preliminary
EMC646SP16K
4Mx16 CellularRAM AD-MUX
Draft Date
July 13,2007
Remark
Preliminary
Emerging Memory & Logic Solutions Inc.
4F Korea Construction Financial Cooperative B/D, 301-1 Yeon-Dong, Jeju-Si, Jeju-Do, Rep.of Korea Zip Code : 690-717
Tel : +82-64-740-1700 Fax : +82-64-740-1749~1750 / Homepage : www.emlsi.com
1
The attached datasheets are provided by EMLSI reserve the right to change the specifications and products. EMLSI will answer to
your questions about device. If you have any questions, please contact the EMLSI office.






EMC646SP16K Datasheet, Funktion
Preliminary
EMC646SP16K
4Mx16 CellularRAM AD-MUX
GENERAL DESCRIPTION
64M CellularRAM products are high-speed, CMOS pseudo-static random access memory developed for low-power, portable
applications. The 64Mb CellularRAM device has a DRAM core organized as 4 Meg x 16 bits. These devices are a variation of the
industry-standard Flash control interface, with a multiplexed address/data bus. The multiplexed address and data functionality
dramatically reduce the required signal count, and increases read/write bandwidth. For seamless operation on a burst Flash bus, 64M
CellularRAM products incorporate a transparent self refresh mechanism. The hidden refresh requires no additional support from the
system memory controller and has no significant impact on device READ/WRITE performance. Two user accessible control registers
define device operation. The bus configuration register (BCR) defines how the 64M CellularRAM device interacts with the system
memory bus and is nearly identical to its counterpart on burst mode Flash devices. The refresh configuration register (RCR) is used to
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on the DRAM array. These registers are automatically loaded with default settings during power-up
normal operation. Special attention has been focused on standby current consumption during
and
self
refresh. 64M CellularRAM products include two mechanisms to minimize standby current. Partial array refresh (PAR) enables the
system to limit refresh to only that part of the DRAM array that contains essential data. Temperature compensated self refresh (TCSR)
uses an onchip sensor to adjust the refresh rate to match the device temperature-the refresh rate decreases at lower temperatures to
minimize current consumption during standby. The system configurable refresh mechanisms are accessed through the RCR. This 64M
CellularRAM specification defines the industry-standard CellularRAM1.5 x16 A/D Mux feature set established by the CellularRAM
Workgroup. It includes support for both variable and fixed latency, with three output-device drive-strength settings, a variety of wrap
options, and a device ID register (DIDR).
Figure 1: FUNTIONAL BLOCK DIAGRAM - 4 meg x 16
A[21:16]
Address Decode
Logic
Refresh Configuration
Register (RCR)
4,096K x 16
DRAM
MEMORY
ARRAY
Input
Output
MUX
and
Buffers
A/DQ[7:0]
A/DQ[15:8]
Device ID Register
(DIDR)
CLK
CE#
WE#
OE#
ADV#
CRE
LB#
UB#
WAIT
Control
Logic
Bus Configuration
Register (BCR)
Internal
External
Note: Functional block diagrams illustrate simplified device operation. See pin descriptions; Bus operations table; and timing diagrams for detailed information.
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EMC646SP16K pdf, datenblatt
Preliminary
EMC646SP16K
4Mx16 CellularRAM AD-MUX
Burst Mode Operation
Burst mode operations enable high-speed synchronous READ and WRITE operations. Burst operations consist of a multi-clock
sequence that must be performed in an ordered fashion. After CE# goes LOW, the address to access is latched on the rising edge of the
next clock that ADV# is LOW. During this first clock rising edge, WE# indicates whether the operation is going to be a READ (WE# =
HIGH, Figure 5) or WRITE (WE# = LOW, Figure 6 on page 13).
Figure 5: Burst Mode READ (4-word burst)
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A[21:16]
ADV#
CE#
Address
Latency Code 2(3 clocks)
Address
OE#
WE#
LB#/UB#
A/DQ[15:0]
WAIT
Address
D0 D1 D2 D3
Address
READ Burst Identified
(WE# = HIGH)
Note:
Non-default BCR settings for burst mode READ (4-word burst): Fixed or variable latency;
Latency code two (three clocks); WAIT active LOW; WAIT asserted during delay.
Diagram in the figure above is representative of variable latency with no refresh collision or fixed-latency access.
READ Burst Identified
(WE# = HIGH)
Don’t Care
Undefined
12

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