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PDF CGD1042H Data sheet ( Hoja de datos )
| Número de pieza | CGD1042H | |
| Descripción | 23 dB gain high output power doubler | |
| Fabricantes | NXP Semiconductors | |
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CGD1042H
1 GHz, 23 dB gain high output power doubler
Rev. 01 — 9 October 2007
Product data sheet
1. Product profile
1.1 General description
Hybrid amplifier module in a SOT115J package, operating at a supply voltage of 24 V
Direct Current (DC), employing Hetero junction Field Effect Transistor (HFET) GaAs dies.
CAUTION
www.DataSheet4U.com
This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken
during transport and handling.
1.2 Features
I High output power capability
I Excellent linearity
I Extremely low noise
I Excellent return loss properties
I Rugged construction
I Unconditionally stable
I Thermal optimized design
1.3 Applications
I CATV systems operating in the 40 MHz to 1000 MHz frequency range
1.4 Quick reference data
Table 1. Quick reference data
Bandwidth to 1000 MHz; VB = 24 V (DC); Tmb = 35 °C; unless otherwise specified.
Symbol Parameter
Conditions
Min Typ Max
Gp power gain
f = 45 MHz
- 21.5 -
f = 1000 MHz
22.0 23.0 24.0
Itot total current
[1] 430 450 470
[1] Direct Current (DC).
Unit
dB
dB
mA
1 page  
NXP Semiconductors
CGD1042H
1 GHz, 23 dB gain high output power doubler
7. Abbreviations
Table 6. Abbreviations
Acronym
Description
CATV
Community Antenna TeleVision
NTSC
National Television Standard Committee
RF Radio Frequency
UNC
UNified Coarse
8. Revision history
www.DataTSahbelee7t4. U.cRoemvision history
Document ID
Release date
CGD1042H_1
20071009
Data sheet status
Product data sheet
Change notice
-
Supersedes
-
CGD1042H_1
Product data sheet
Rev. 01 — 9 October 2007
© NXP B.V. 2007. All rights reserved.
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| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet CGD1042H.PDF ] | |
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