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PDF GFD30N03 Data sheet ( Hoja de datos )
| Número de pieza | GFD30N03 | |
| Descripción | N-Channel Enhancement Mode MOSFET | |
| Fabricantes | General Semiconductor | |
| Logotipo |  |
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GFD30N03
Vishay Semiconductor
N-Channel Enhancement-Mode MOSFET
CH ®
TG FREENN ETTO-252 (DPAK)
G
0.265 (6.73)
0.255 (6.48)
0.214 (5.44)
www.DataSheet4U.co0m.206D(5.23)
0.094 (2.39)
0.087 (2.21)
0.050 (1.27)
0.035 (0.89)
0.023 (0.58)
0.018 (0.46)
0.170 (4.32) min.
0.245 (6.22)
0.235 (5.97)
0.410 (10.41)
0.060 (1.52)
0.380 (9.65)
GS
0.045 (1.14)
0.197 (5.00)
0.177 (4.49)
VDS 30V
D
RDS(ON) 15mΩ
ID 43A
S
0.190
(4.826)
0.165
(4.191)
0.100
(2.54)
0.035 (0.89)
0.028 (0.71)
0.204 (5.18)
0.156 (3.96)
0.040 (1.02)
0.025 (0.64)
0.023 (0.58)
0.018 (0.46)
0.045 (1.14)
0.035 (0.89)
0.020 (0.51)
min.
0.009 (0.23)
0.001 (0.03)
Mechanical Data
Case: JEDEC TO-252 molded plastic body
Terminals: Solder plated, solderable per MIL-STD-750,
Method 2026
High temperature soldering guaranteed:
250°C/10 seconds at terminals
Weight: 0.011oz., 0.4g
0.118
(3.0)
Dimensions in inches
and (millimeters)
0.243
(6.172)
0.063
(1.6)
Mounting Pad Layout
Features
• Advanced Trench Process Technology
• High Density Cell Design for Ultra Low On-Resistance
• Specially Designed for Low Voltage DC/DC Converters
• Fast Switching for High Efficiency
Maximum Ratings and Thermal Characteristics (TC = 25°C unless otherwise noted)
Parameter
Symbol
Limit
Drain-Source Voltage
VDS
30
Gate-Source Voltage
VGS
± 20
Continuous Drain Current
Pulsed Drain Current(1)
ID 43
IDM 120
Maximum Power Dissipation
TC = 25°C
TC = 100°C
PD
44.5
17.8
Operating Junction and Storage Temperature Range
TJ, Tstg
–55 to 150
Junction-to-Case Thermal Resistance
Junction-to-Ambient Thermal Resistance(2)
RθJC
RθJA
2.8
50
Note: (1) Pulse width limited by maximum junction temperature
(2) 1-in2 2oz. Cu PCB mounted
Unit
V
A
W
°C
°C/W
Document Number 74557
10-Dec-01
www.vishay.com
1
1 page  
Ratings and
Characteristic Curves (TA = 25°C unless otherwise noted)
GFD30N03
Vishay Semiconductor
Fig. 10 – Transient Thermal
Impedance
1
www.DataSheet4U.com
0.1
0.01
0.0001
0.001
0.01
0.1
1
10
Fig. 11 – Power vs. Pulse Duration
1000
Single Pulse
800 RθJC = 2.8°C/W
TC = 25°C
600
400
200
0
0.0001 0.001
0.01
0.1
1
10
Fig. 12 – Maximum Safe Operating Area
1000
100
RDS(ON)
Limit
DC
10
VGS = 10V
Single Pulse
RθJC = 2.8°C/W
TC = 25°C
100ms
1
0.1 1
100µs
10ms1ms
10
VDS -- Drain-Source Voltage (V)
100
Document Number 74557
10-Dec-01
www.vishay.com
5
5 Page | ||
| Páginas | Total 5 Páginas | |
| PDF Descargar | [ Datasheet GFD30N03.PDF ] | |
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