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K06N60 Schematic ( PDF Datasheet ) - Infineon

Teilenummer K06N60
Beschreibung Fast IGBT
Hersteller Infineon
Logo Infineon Logo 




Gesamt 16 Seiten
K06N60 Datasheet, Funktion
SKP06N60
SKA06N60
Fast IGBT in NPT-technology with soft, fast recovery anti-parallel Emitter Controlled
Diode
75% lower Eoff compared to previous generation
combined with low conduction losses
Short circuit withstand time – 10 s
Designed for: Motor controls, Inverter
NPT-Technology for 600V applications offers:
- very tight parameter distribution
- high ruggedness, temperature stable behaviour
- parallel switching capability
Very soft, fast recovery anti-parallel Emitter Controlled
Diode
PG-TO-220-3-1
(TO-220AB)
Isolated TO-220, 2.5kV, 60s
Pb-free lead plating; RoHS compliant
Qualified according to JEDEC1 for target applications
Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/
C
G
E
PG-TO-220-3-31 / -111
(FullPAK)
Type
SKP06N60
SKA06N60
VCE IC VCE(sat) Tj Marking Package
600V
6A
2.3V
150C K06N60 PG-TO-220-3-1
600V
5A
2.3V
150C K06N60 PG-TO-220-3-31 / -111
1 J-STD-020 and JESD-022
1
Rev. 2.4 12.06.2013






K06N60 Datasheet, Funktion
SKP06N60
SKA06N60
20A 20A
15A
VGE=20V
10A 15V
13V
11V
9V
5A 7V
5V
15A
VGE=20V
15V
13V
10A 11V
9V
7V
5V
5A
0A
0V 1V 2V 3V 4V 5V
VCE, COLLECTOR-EMITTER VOLTAGE
Figure 5. Typical output characteristics
(Tj = 25C)
0A
0V 1V 2V 3V 4V 5V
VCE, COLLECTOR-EMITTER VOLTAGE
Figure 6. Typical output characteristics
(Tj = 150C)
20A
18A Tj=+25°C
16A -55°C
+150°C
14A
12A
10A
8A
6A
4A
2A
0A
0V 2V 4V 6V 8V 10V
VGE, GATE-EMITTER VOLTAGE
Figure 7. Typical transfer characteristics
(VCE = 10V)
4.0V
3.5V
IC = 12A
3.0V
2.5V
IC = 6A
2.0V
1.5V
1.0V
-50°C 0°C 50°C 100°C 150°C
Tj, JUNCTION TEMPERATURE
Figure 8. Typical collector-emitter
saturation voltage as a function of junction
temperature
(VGE = 15V)
6 Rev. 2.4 12.06.2013

6 Page









K06N60 pdf, datenblatt
D=0.5
100K/W
0.2
0.1
0.05
10-1K/W
0.02
0.01
10-2K/W
SKP06N60
R,(K/W)
0.705
0.561
0.583
, (s)
0.0341
3.74E-3
3.25E-4
R1 R2
single pulse
10-3K/W
1µs
C1=1/R1 C2=2/R2
10µs 100µs 1ms 10ms 100ms
tp, PULSE WIDTH
Figure 28. IGBT transient thermal
impedance as a function of pulse width
(D = tp / T)
1s
SKP06N60
SKA06N60
101K/W
D=0.5
100K/W 0.2
0.1
0.05
10-1K/W 0.02
0.01
10-2K/W
SKA06N60
R,(K/W)
2.73
0.395
0.353
0.323
, (s)
1.83
2.93*10-2
2.46*10-3
3.45*10-4
R1 R2
10-3K/W
1µs
single pulse
10µs 100µs
C1=1/R1 C2=2/R2
1ms 10ms 100ms 1s
tp, PULSE WIDTH
Figure 29. IGBT transient thermal
impedance as a function of pulse width
(D = tp / T)
10s
12 Rev. 2.4 12.06.2013

12 Page





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