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PDF AON6710 Data sheet ( Hoja de datos )
| Número de pieza | AON6710 | |
| Descripción | Field Effect Transistor | |
| Fabricantes | Alpha & Omega Semiconductors | |
| Logotipo |  |
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AON6710
N-Channel Enhancement Mode Field Effect Transistor
SRFET TM
General Description
Features
SRFETTM The AON6710/L uses advanced trench
technology with a monolithically integrated Schottky
www.DataSheet4dUio.cdoemto provide excellent RDS(ON) and low gate
charge.This device is suitable for use as a low side
FET in SMPS, load switchng and general purpose
applications. AON6710 and AON6710L are electrically
identical.
-RoHS Compliant
-AON6710L is Halogen Free
VDS (V) = 30V
ID = 20A (VGS = 10V)
RDS(ON) < 4.7mΩ (VGS = 10V)
RDS(ON) < 6.7mΩ (VGS = 4.5V)
Fits SOIC8
footprint !
DFN5X6
Top View
SD
SD
SD
GD
G
D
SRFET TM
Soft Recovery MOSFET:
Integrated Schottky Diode
S
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain
Current BJ
TC=25°C
TC=100°C
ID
Pulsed Drain Current
IDM
Continuous Drain
Current H
Avalanche Current C
TA=25°C
TA=70°C
Repetitive avalanche energy L=0.3mH C
IDSM
IAR
EAR
TC=25°C
Power Dissipation B TC=100°C
PD
TA=25°C
Power Dissipation A TA=70°C
PDSM
Junction and Storage Temperature Range TJ, TSTG
Maximum
30
±20
30
30
100
19
15
30
135
62
25
2.5
1.6
-55 to 150
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A
Maximum Junction-to-Case C
t ≤ 10s
Steady-State
Steady-State
Symbol
RθJA
RθJC
Typ
14.2
42
1.2
Max
20
50
2.0
Units
V
V
A
A
A
mJ
W
W
°C
Units
°C/W
°C/W
°C/W
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
1 page  
AON6710
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
140
120
100
tA
=
L⋅ID
BV − VDD
80
60
40
TA=25°C
20
www.DataSheet4U.com 0
0.00001
0.0001
0.001
Time in avalanche, tA (s)
Figure 12: Single Pulse Avalanche capability
75
60
45
30
15
0
0
25 50 75 100 125
TCASE (°C)
Figure 13: Power De-rating (Note B)
150
40
30
20
10
0
0
10
1
25 50 75 100 125
TCASE (°C)
Figure 14: Current De-rating (Note B)
150
50
TA=25°C
40
30
20
10
0
0.001 0.01 0.1 1 10 100 1000
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-to-
Ambient (Note H)
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
RθJA=60°C/W
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
0.1
0.01
0.00001
Single Pulse
PD
Ton
T
0.0001
0.001
0.01
0.1
1
10
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note H)
100
1000
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
5 Page | ||
| Páginas | Total 5 Páginas | |
| PDF Descargar | [ Datasheet AON6710.PDF ] | |
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