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Teilenummer | 3DD13005 |
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Beschreibung | Plastic-Encapsulated Transistors | |
Hersteller | TRANSYS Electronics | |
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Gesamt 1 Seiten Transys
Electronics
LIMITED
TO-220 Plastic-Encapsulated Transistors
3DD13005 TRANSISTOR (NPN)
TO-220
FEATURES
.DataSheet4U.cPomower dissipation
PCM: 1.5 W (Tamb=25℃)
Collector current
ICM: 4 A
Collector-base voltage
V(BR)CBO:
700 V
Operating and storage junction temperature range
1. BASE
2. COLLECTOR
3. EMITTER
123
TJ, Tstg: -55℃ to +150℃
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter
Symbol
Test conditions
MIN TYP
Collector-base breakdown voltage
V(BR)CBO
Ic= 1000µA, IE=0
700
Collector-emitter breakdown voltage V(BR)CEO
Ic= 10mA, IB=0
400
Emitter-base breakdown voltage
V(BR)EBO
IE= 1000µA, IC=0
9
Collector cut-off current
ICBO VCB= 700V, IE=0
Collector cut-off current
ICEO VCE= 400V, IB=0
Emitter cut-off current
IEBO VEB=9V, IC=0
DC current gain
hFE
VCE= 5V, IC= 1000mA
10
Collector-emitter saturation voltage
VCE (sat) IC=2000mA, IB=500 mA
Base-emitter saturation voltage
Transition Frequency
Fall time
Storage time
VBE (sat)
fT
tf
ts
IC=2000mA, IB= 500mA
VCE=10 V, IC=500mA
f = 1MHz
IB1=-IB2=0.4A, IC=2A
VCC=120V
5
MAX
1000
100
1000
40
0.6
1.6
0.9
4
UNIT
V
V
V
µA
µA
µA
V
V
MHz
µs
µs
CLASSIFICATION OF hFE
Rank
Range
10-15
15-20
20-25
25-30
30-35
35-40
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Seiten | Gesamt 1 Seiten | |
PDF Download | [ 3DD13005 Schematic.PDF ] |
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