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PDF 3DD13005 Data sheet ( Hoja de datos )
| Número de pieza | 3DD13005 | |
| Descripción | TRANSISTOR | |
| Fabricantes | Jiangsu Changjiang Electronics | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de 3DD13005 (archivo pdf) en la parte inferior de esta página. Total 3 Páginas | ||
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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-220 Plastic-Encapsulate Transistors
3DD13005 TRANSISTOR NPN
FEATURES
www.DataSheetP4Uo.wcoemr dissipation
PCM : 1.5 W Tamb=25
Collector current
ICM: 4 A
Collector-base voltage
V(BR)CBO : 700 V
Operating and storage junction temperature range
TJ Tstg: -55 to +150
TO 220
1.BASE
2.COLLECTOR
3.EMITTER
123
ELECTRICAL CHARACTERISTICS Tamb=25
Parameter
Symbol
unless otherwise specified
Test conditions
MIN TYP
MAX
Collector-base breakdown voltage
V(BR)CBO
Ic= 1000 µA IE=0
700
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
V(BR)CEO
V(BR)EBO
Ic= 10 mA IB=0
IE= 1000 µA IC=0
400
9
Collector cut-off current
ICBO VCB= 700 V IE=0
1000
Collector cut-off current
Emitter cut-off current
ICEO
IEBO
VCE= 400 V IB=0
VEB= 9 V IC=0
100
1000
DC current gain
hFE
VCE= 5 V, IC= 1000mA
10
40
Collector-emitter saturation voltage
VCE (sat)
IC=2000m A,IB=500 mA
0.6
Base-emitter saturation voltage
Transition Frequency
Fall time
VBE (sat)
fT
tf
IC=2000m A, IB= 500mA
VCE=10 V, IC=500mA
f = 1MHz
IB1=-IB2=0.4A, IC=2A
5
1.6
0.9
Storage time
t s VCC=120V
4
UNIT
V
V
V
µA
µA
µA
V
V
MHz
µs
µs
CLASSIFICATION OF hFE
Rank
Range
10-15
15-20
20-25
25-30
30-35
35-40
1 page | ||
| Páginas | Total 3 Páginas | |
| PDF Descargar | [ Datasheet 3DD13005.PDF ] | |
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