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What is 3DD13003?

This electronic component, produced by the manufacturer "TRANSYS Electronics", performs the same function as "Plastic-Encapsulated Transistors".


3DD13003 Datasheet PDF - TRANSYS Electronics

Part Number 3DD13003
Description Plastic-Encapsulated Transistors
Manufacturers TRANSYS Electronics 
Logo TRANSYS Electronics Logo 


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Transys
Electronics
LIMITED
TO-220 Plastic-Encapsulated Transistors
3DD13003 TRANSISTOR (NPN)
TO-220
FEATURES
Power dissipation
1. BASE
aSheet4U.com
PCM:
1.5 W (Tamb=25)
2. COLLECTOR
Collector current
ICM: 1.5 A
Collector-base voltage
V(BR)CBO:
700 V
Operating and storage junction temperature range
3. EMITTER
123
TJ, Tstg: -55to +150
ELECTRICAL CHARACTERISTICS (Tamb=25unless otherwise specified)
Parameter
Symbol
Test conditions
MIN TYP
MAX
Collector-base breakdown voltage
V(BR)CBO
Ic= 1000µA, IE=0
700
Collector-emitter breakdown voltage V(BR)CEO
Ic= 10mA, IB=0
400
Emitter-base breakdown voltage
V(BR)EBO
IE= 1000µA, IC=0
9
Collector cut-off current
ICBO VCB= 700V, IE=0
1000
Collector cut-off current
ICEO VCE= 400V, IB=0
500
Emitter cut-off current
IEBO VEB= 9V, IC=0
1000
DC current gain
hFE(1)
hFE(2)
VCE= 2V, IC= 0.5 A
VCE= 10V, IC= 0.5 mA
8
5
40
Collector-emitter saturation voltage
VCE(sat) IC=1000mA, IB=250 mA
1
Base-emitter saturation voltage
VBE(sat) IC=1000mA, IB= 250mA
1.2
Base-emitter voltage
Transition frequency
Fall time
Storage time
VBE IE= 2000 mA
fT
Ic=100mA, VCE=10V
f=1MHZ
5
tf Vcc=100V, Ic=1A
ts IB1=-IB2=0.2A
3
0.5
2.5
UNIT
V
V
V
µA
µA
µA
V
V
V
MHZ
µS
µS
CLASSIFICATION OF hFE(1)
Rank
Range
8-10
10-15
15-20
20-25
25-30
30-35
35-40


Part Details

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3DD13003 datasheet


1. - Fast Switching NPN Transistor

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