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PDF C3507 Data sheet ( Hoja de datos )
| Número de pieza | C3507 | |
| Descripción | NPN Transistor - 2SC3507 | |
| Fabricantes | Panasonic | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de C3507 (archivo pdf) en la parte inferior de esta página. Total 4 Páginas | ||
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Power Transistors
2SC3507
Silicon NPN triple diffusion planar type
For high breakdown voltage high-speed switching
■ Features
• High-speed switching
• High collector-base voltage (Emitter open) VCBO
• Satisfactory linearity of forward current transfer ratio hFE
• Full-pack package which can be installed to the heat sink with one
screw
www.DataSh■eetA4Ub.scomlute Maximum Ratings TC = 25°C
Parameter
Symbol Rating
Collector-base voltage (Emitter open)
Collector-emitter voltage (E-B short)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector current
Base current
Peak collector current
Collector power dissipation
Junction temperature
Ta = 25°C
Storage temperature
VCBO
VCES
VCEO
VEBO
IC
IB
ICP
PC
Tj
Tstg
1 000
1 000
800
7
5
3
10
80
3.0
150
−55 to +150
Unit
V
V
V
V
A
A
A
W
°C
°C
15.0±0.3
11.0±0.2
Unit: mm
5.0±0.2
(3.2)
φ 3.2±0.1
2.0±0.2
1.1±0.1
2.0±0.1
0.6±0.2
5.45±0.3
10.9±0.5
123
1: Base
2: Collector
3: Emitter
EIAJ: SC-92
TOP-3F-A1 Package
■ Electrical Characteristics TC = 25°C ± 3°C
Parameter
Symbol
Conditions
Min Typ Max Unit
Collector-emitter sustaining voltage * VCEO(SUS) IC = 0.5 A, L = 50 mH
Collector-base cutoff current (Emitter open) ICBO VCB = 1 000 V, IE = 0
Emitter-base cutoff current (Collector open) IEBO VEB = 7 V, IC = 0
Forward current transfer ratio
hFE VCE = 5 V, IC = 3 A
Collector-emitter saturation voltage
VCE(sat) IC = 3 A, IB = 0.6 A
Base-emitter saturation voltage
VBE(sat) IC = 3 A, IB = 0.6 A
Transition frequency
fT VCE = 5 V, IC = 0.5 A, f = 1 MHz
Turn-on time
ton IC = 3 A
Storage time
tstg IB1 = 0.6 A, IB2 = −1.2 A
Fall time
tf VCC = 250 V
800 V
50 µA
50 µA
6
1.5 V
1.5 V
6 MHz
1.0 µs
2.5 µs
0.5 µs
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: VCEO(SUS) test circuit 50 Hz/60 Hz
mercury relay
X
L
120 Ω
6V
Y
1Ω
15 V
G
Publication date: February 2003
SJD00106BED
1
1 page | ||
| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet C3507.PDF ] | |
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