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PDF EFA072A Data sheet ( Hoja de datos )
| Número de pieza | EFA072A | |
| Descripción | Low Distortion GaAs Power FET | |
| Fabricantes | Execlics | |
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Hay una vista previa y un enlace de descarga de EFA072A (archivo pdf) en la parte inferior de esta página. Total 2 Páginas | ||
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Excelics
EFA072A
PRELIMINARY DATA SHEET
Low Distortion GaAs Power FET
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www.DataSheet4U.com
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+25.0dBm TYPICAL OUTPUT POWER
10.0dB TYPICAL POWER GAIN AT 12GHz
0.3 X 720 MICRON RECESSED “MUSHROOM” GATE
Si3N4 PASSIVATION
ADVANCED EPITAXIAL DOPING PROFILE
PROVIDES HIGH POWER EFFICIENCY,
LINEARITY AND RELIABILITY
Idss SORTED IN 15mA PER BIN RANGE
ELECTRICAL CHARACTERISTICS (Ta = 25 OC)
SYMBOLS
PARAMETERS/TEST CONDITIONS
P1dB
G1dB
PAE
Output Power at 1dB Compression
f=12GHz
Vds=8V, Ids=50% Idss
f=18GHz
Gain at 1dB Compression
f=12GHz
Vds=8V, Ids=50% Idss
f=18GHz
Power Added Efficiency at 1dB Compression
Vds=8V, Ids=50% Idss
f=12GHz
Idss Saturated Drain Current Vds=3V, Vgs=0V
Gm Transconductance Vds=3V, Vgs=0V
Vp
Pinch-off Voltage
Vds=3V, Ids=2.0mA
BVgd
Drain Breakdown Voltage Igd=1.0mA
BVgs
Source Breakdown Voltage Igs=1.0mA
Rth Thermal Resistance (Au-Sn Eutectic Attach)
Chip Thickness: 75 ± 13 microns
All Dimensions In Microns
MIN
22.5
8.0
120
TYP
25.0
25.0
10.0
7.5
32
190
MAX UNIT
dBm
dB
%
270 mA
80 110
mS
-2.0 -3.5 V
-12 -15
V
-7 -14
55
V
oC/W
MAXIMUM RATINGS AT 25OC
SYMBOLS PARAMETERS
ABSOLUTE1
CONTINUOUS2
Vds
Drain-Source Voltage
12V
8V
Vgs
Gate-Source Voltage
-8V
-4V
Ids Drain Current
Idss
260Ma
Igsf
Forward Gate Current
20mA
4mA
Pin Input Power
25dBm
Tch
Channel Temperature
175oC
Tstg
Storage Temperature
-65/175oC
@ 3dB Compression
150oC
-65/150oC
Pt
Total Power Dissipation
2.5 W
2.1 W
Note: 1. Exceeding any of the above ratings may result in permanent damage.
2. Exceeding any of the above ratings may reduce MTTF below design goals.
Excelics Semiconductor, Inc., 2908 Scott Blvd., Santa Clara, CA 95054
Phone: (408) 970-8664 Fax: (408) 970-8998 Web Site: www.excelics.com
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