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PDF EFA025A-70 Data sheet ( Hoja de datos )
| Número de pieza | EFA025A-70 | |
| Descripción | Low Distortion GaAs Power FET | |
| Fabricantes | Execlics | |
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Excelics
EFA025A-70
DATA SHEET
Low Distortion GaAs Power FET
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www.DataSheet4U.com •
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NON-HERMETIC LOW COST CERAMIC 70mil PACKAGE
+20.0dBm TYPICAL OUTPUT POWER
10.0dB TYPICAL POWER GAIN AT 12GHz
TYPICAL 1.5dB NOISE FIGURE AND 10dB ASSOCIATED
GAIN AT 12GHz
0.3 X 250 MICRON RECESSED “MUSHROOM” GATE
Si3N4 PASSIVATION
ADVANCED EPITAXIAL DOPING PROFILE
PROVIDES HIGH POWER EFFICIENCY,
LINEARITY AND RELIABILITY
'
66
*
All Dimensions In mils.
ELECTRICAL CHARACTERISTICS (Ta = 25 OC)
SYMBOLS
PARAMETERS/TEST CONDITIONS
P1dB Output Power at 1dB Compression
Vds=6V, Ids=50% Idss
f=12GHz
f=18GHz
G1dB Gain at 1dB Compression
Vds=6V, Ids=50% Idss
f=12GHz
f=18GHz
PAE Power Added Efficiency at 1dB Compression
Vds=6V, Ids=50% Idss
f=12GHz
NF Noise Figure Vds=3V,Ids=15mA
f=12GHz
GA Associated Gain Vds=3V,Ids=15mA f=12GHz
Idss Saturated Drain Current Vds=3V, Vgs=0V
Gm Transconductance
Vds=3V, Vgs=0V
Vp Pinch-off Voltage
Vds=3V, Ids=1.0 mA
BVgd Drain Breakdown Voltage Igd=1.0mA
BVgs Source Breakdown Voltage Igs=1.0mA
Rth Thermal Resistance
* Overall Rth depends on case mounting.
MIN
17
8.5
35
30
-10
-6
TYP
20
20
10
7
35
1.5
10
65
40
-2
-15
-14
370*
MAX UNIT
dBm
dB
%
dB
dB
105 mA
mS
-3.5 V
V
V
oC/W
MAXIMUM RATINGS AT 25OC
SYMBOLS PARAMETERS
ABSOLUTE1 CONTINUOUS2
Vds
Drain-Source Voltage
10V
6V
Vgs Gate-Source Voltage -6V
-4V
Ids Drain Current
Idss
52mA
Igsf
Forward Gate Current
6mA
1mA
Pin Input Power
20dBm
@ 3dB Compression
Tch
Channel Temperature
175oC
150 oC
Tstg Storage Temperature -65/175oC
-65/150 oC
Pt
Total Power Dissipation
370mW
310mW
Note: 1 Exceeding any of the above ratings may result in permanent damage.
2. Exceeding any of the above ratings may reduce MTTF below design goals.
Excelics Semiconductor, Inc., 2908 Scott Blvd., Santa Clara, CA 95054
Phone: (408) 970-8664 Fax: (408) 970-8998 Web Site: www.excelics.com
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