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39VF1601 Schematic ( PDF Datasheet ) - SST

Teilenummer 39VF1601
Beschreibung SST39VF1601
Hersteller SST
Logo SST Logo 




Gesamt 32 Seiten
39VF1601 Datasheet, Funktion
16 Mbit / 32 Mbit / 64 Mbit (x16) Multi-Purpose Flash Plus
SST39VF1601 / SST39VF3201 / SST39VF6401
SST39VF1602 / SST39VF3202 / SST39VF6402
SST39VF160x / 320x / 640x2.7V 16Mb / 32Mb / 64Mb (x16) MPF+ memories
FEATURES:
Preliminary Specifications
• Organized as 1M x16: SST39VF1601/1602
2M x16: SST39VF3201/3202
4M x16: SST39VF6401/6402
• Single Voltage Read and Write Operations
– 2.7-3.6V
• Superior Reliability
– Endurance: 100,000 Cycles (Typical)
– Greater than 100 years Data Retention
www.DataSheet4UL.coomw Power Consumption (typical values at 5 MHz)
– Active Current: 9 mA (typical)
– Standby Current: 3 µA (typical)
– Auto Low Power Mode: 3 µA (typical)
• Hardware Block-Protection/WP# Input Pin
– Top Block-Protection (top 32 KWord)
for SST39VF1602/3202/6402
– Bottom Block-Protection (bottom 32 KWord)
for SST39VF1601/3201/6401
• Sector-Erase Capability
– Uniform 2 KWord sectors
• Block-Erase Capability
– Uniform 32 KWord blocks
• Chip-Erase Capability
• Erase-Suspend/Erase-Resume Capabilities
• Hardware Reset Pin (RST#)
• Security-ID Feature
– SST: 128 bits; User: 128 bits
• Fast Read Access Time:
– 70 ns
– 90 ns
• Latched Address and Data
• Fast Erase and Word-Program:
– Sector-Erase Time: 18 ms (typical)
– Block-Erase Time: 18 ms (typical)
– Chip-Erase Time: 40 ms (typical)
– Word-Program Time: 7 µs (typical)
• Automatic Write Timing
– Internal VPP Generation
• End-of-Write Detection
– Toggle Bits
– Data# Polling
• CMOS I/O Compatibility
• JEDEC Standard
– Flash EEPROM Pinouts and command sets
• Packages Available
– 48-lead TSOP (12mm x 20mm)
– 48-ball TFBGA (6mm x 8mm) for 16M and 32M
– 48-ball TFBGA (8mm x 10mm) for 64M
PRODUCT DESCRIPTION
The SST39VF160x/320x/640x devices are 1M x16, 2M
x16, and 4M x16 respectively, CMOS Multi-Purpose
Flash Plus (MPF+) manufactured with SST’s proprietary,
high performance CMOS SuperFlash technology. The
split-gate cell design and thick-oxide tunneling injector
attain better reliability and manufacturability compared
with alternate approaches. The SST39VF160x/320x/640x
write (Program or Erase) with a 2.7-3.6V power supply.
These devices conform to JEDEC standard pinouts for
x16 memories.
Featuring high performance Word-Program, the
SST39VF160x/320x/640x devices provide a typical Word-
Program time of 7 µsec. These devices use Toggle Bit or
Data# Polling to indicate the completion of Program opera-
tion. To protect against inadvertent write, they have on-chip
hardware and Software Data Protection schemes.
Designed, manufactured, and tested for a wide spectrum of
applications, these devices are offered with a guaranteed
typical endurance of 100,000 cycles. Data retention is rated
at greater than 100 years.
©2003 Silicon Storage Technology, Inc.
S71223-03-000
11/03
1
The SST39VF160x/320x/640x devices are suited for appli-
cations that require convenient and economical updating of
program, configuration, or data memory. For all system
applications, they significantly improve performance and
reliability, while lowering power consumption. They inher-
ently use less energy during Erase and Program than alter-
native flash technologies. The total energy consumed is a
function of the applied voltage, current, and time of applica-
tion. Since for any given voltage range, the SuperFlash
technology uses less current to program and has a shorter
erase time, the total energy consumed during any Erase or
Program operation is less than alternative flash technolo-
gies. These devices also improve flexibility while lowering
the cost for program, data, and configuration storage appli-
cations.
The SuperFlash technology provides fixed Erase and Pro-
gram times, independent of the number of Erase/Program
cycles that have occurred. Therefore the system software
or hardware does not have to be modified or de-rated as is
necessary with alternative flash technologies, whose
Erase and Program times increase with accumulated
Erase/Program cycles.
The SST logo and SuperFlash are registered trademarks of Silicon Storage Technology, Inc.
MPF is a trademark of Silicon Storage Technology, Inc.
These specifications are subject to change without notice.






39VF1601 Datasheet, Funktion
Preliminary Specifications
FUNCTIONAL BLOCK DIAGRAM
16 Mbit / 32 Mbit / 64 Mbit Multi-Purpose Flash Plus
SST39VF1601 / SST39VF3201 / SST39VF6401
SST39VF1602 / SST39VF3202 / SST39VF6402
www.DataSheet4U.com
X-Decoder
Memory Address
Address Buffer & Latches
CE#
OE#
WE#
WP#
RESET#
Control Logic
SuperFlash
Memory
Y-Decoder
I/O Buffers and Data Latches
DQ15 - DQ0
1223 B1.0
SST39VF6401/6402 SST39VF3201/3202 SST39VF1601/1602
A15
A14
A13
A12
A11
A10
A9
A8
A19
A20
WE#
RST#
A21
WP#
NC
A18
A17
A7
A6
A5
A4
A3
A2
A1
A15
A14
A13
A12
A11
A10
A9
A8
A19
A20
WE#
RST#
NC
WP#
NC
A18
A17
A7
A6
A5
A4
A3
A2
A1
A15
A14
A13
A12
A11
A10
A9
A8
A19
NC
WE#
RST#
NC
WP#
NC
A18
A17
A7
A6
A5
A4
A3
A2
A1
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
FIGURE 1: PIN ASSIGNMENTS FOR 48-LEAD TSOP
Standard Pinout
Top View
Die Up
SST39VF160x/320x/640x
48
47
46
45
44
43
42
41
40
39
38
37
36
35
34
33
32
31
30
29
28
27
26
25
1223 48-tsop P01.3
A16
NC
VSS
DQ15
DQ7
DQ14
DQ6
DQ13
DQ5
DQ12
DQ4
VDD
DQ11
DQ3
DQ10
DQ2
DQ9
DQ1
DQ8
DQ0
OE#
VSS
CE#
A0
©2003 Silicon Storage Technology, Inc.
6
S71223-03-000
11/03

6 Page









39VF1601 pdf, datenblatt
16 Mbit / 32 Mbit / 64 Mbit Multi-Purpose Flash Plus
SST39VF1601 / SST39VF3201 / SST39VF6401
SST39VF1602 / SST39VF3202 / SST39VF6402
Preliminary Specifications
Absolute Maximum Stress Ratings (Applied conditions greater than those listed under “Absolute Maximum
Stress Ratings” may cause permanent damage to the device. This is a stress rating only and functional operation
of the device at these conditions or conditions greater than those defined in the operational sections of this data
sheet is not implied. Exposure to absolute maximum stress rating conditions may affect device reliability.)
Temperature Under Bias . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -55°C to +125°C
Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -65°C to +150°C
D. C. Voltage on Any Pin to Ground Potential . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -0.5V to VDD+0.5V
Transient Voltage (<20 ns) on Any Pin to Ground Potential . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -2.0V to VDD+2.0V
Voltage on A9 Pin to Ground Potential . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -0.5V to 13.2V
www.DataSheePt4aUc.ckoamge Power Dissipation Capability (Ta = 25°C) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.0W
Surface Mount Lead Soldering Temperature (3 Seconds) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 240°C
Output Short Circuit Current1 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50 mA
1. Outputs shorted for no more than one second. No more than one output shorted at a time.
OPERATING RANGE
Range
Commercial
Industrial
Ambient Temp
0°C to +70°C
-40°C to +85°C
VDD
2.7-3.6V
2.7-3.6V
AC CONDITIONS OF TEST
Input Rise/Fall Time . . . . . . . . . . . . . . 5 ns
Output Load . . . . . . . . . . . . . . . . . . . . CL = 30 pF
See Figures 17 and 18
©2003 Silicon Storage Technology, Inc.
12
S71223-03-000
11/03

12 Page





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