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PDF P16NE06FP Data sheet ( Hoja de datos )

Número de pieza P16NE06FP
Descripción STP16NE06FP
Fabricantes STMicroelectronics 
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No Preview Available ! P16NE06FP Hoja de datos, Descripción, Manual

STP16NE06
® STP16NE06FP
N - CHANNEL 60V - 0.08 - 16A - TO-220/TO-220FP
STripFETPOWER MOSFET
TYPE
VDSS
RDS(on)
ID
STP16NE06
www.DataSheet4U.ScoTmP16NE06FP
60 V
60 V
< 0.100
< 0.100
16 A
11 A
s TYPICAL RDS(on) = 0.08
s AVALANCHE RUGGED TECHNOLOGY
s 100% AVALANCHE TESTED
s 175oC OPERATING TEMPERATURE
s HIGH dV/dt CAPABILITY
s APPLICATION ORIENTED
CHARACTERIZATION
PRELIMINARY DATA
3
2
1
3
2
1
DESCRIPTION
This Power Mosfet is the latest development of
SGS-THOMSON unique "Single Feature Size"
process whereby a single body is implanted on a
strip layout structure. The resulting transistor
shows extremely high packing density for low on-
resistance, rugged avalance characteristics and
less critical alignment steps therefore a remark-
able manufacturing reproducibility.
TO-220
TO-220FP
INTERNAL SCHEMATIC DIAGRAM
APPLICATIONS
s DC MOTOR CONTROL
s DC-DC & DC-AC CONVERTERS
s SYNCHRONOUS RECTIFICATION
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
VDS Drain-source Voltage (VGS = 0)
VDGR
VGS
ID
ID
Drain- gate Voltage (RGS = 20 k)
Gate-source Voltage
Drain Current (continuous) at Tc = 25 oC
Drain Current (continuous) at Tc = 100 oC
IDM() Drain Current (pulsed)
Ptot Total Dissipation at Tc = 25 oC
Derating Factor
VISO Insulation Withstand Voltage (DC)
dV/dt Peak Diode Recovery voltage slope
Tstg Storage Temperature
Tj Max. Operating Junction Temperature
() Pulse width limited by safe operating area
New RDS (on) spec. starting from JULY 98
June 1998
Value
Unit
STP16NE06 STP16NE06FP
60 V
60 V
± 20
V
16 11 A
10 7 A
64 64 A
60 30 W
0.4 0.2 W/oC
2000
V
6
-65 to 175
175
(1) ISD 16 A, di/dt 200 A/µs, VDD V(BR)DSS, Tj TJMAX
V/ns
oC
oC
1/9

1 page




P16NE06FP pdf
Gate Charge vs Gate-source Voltage
Capacitance Variations
STP16NE06/FP
www.DataSheet4U.com
Normalized Gate Threshold Voltage vs
Temperature
Normalized On Resistance vs Temperature
Source-drain Diode Forward Characteristics
5/9

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