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Número de pieza | P16NE06FP | |
Descripción | STP16NE06FP | |
Fabricantes | STMicroelectronics | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de P16NE06FP (archivo pdf) en la parte inferior de esta página. Total 9 Páginas | ||
No Preview Available ! STP16NE06
® STP16NE06FP
N - CHANNEL 60V - 0.08 Ω - 16A - TO-220/TO-220FP
STripFET™ POWER MOSFET
TYPE
VDSS
RDS(on)
ID
STP16NE06
www.DataSheet4U.ScoTmP16NE06FP
60 V
60 V
< 0.100 Ω
< 0.100 Ω
16 A
11 A
s TYPICAL RDS(on) = 0.08 Ω
s AVALANCHE RUGGED TECHNOLOGY
s 100% AVALANCHE TESTED
s 175oC OPERATING TEMPERATURE
s HIGH dV/dt CAPABILITY
s APPLICATION ORIENTED
CHARACTERIZATION
PRELIMINARY DATA
3
2
1
3
2
1
DESCRIPTION
This Power Mosfet is the latest development of
SGS-THOMSON unique "Single Feature Size"
process whereby a single body is implanted on a
strip layout structure. The resulting transistor
shows extremely high packing density for low on-
resistance, rugged avalance characteristics and
less critical alignment steps therefore a remark-
able manufacturing reproducibility.
TO-220
TO-220FP
INTERNAL SCHEMATIC DIAGRAM
APPLICATIONS
s DC MOTOR CONTROL
s DC-DC & DC-AC CONVERTERS
s SYNCHRONOUS RECTIFICATION
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
VDS Drain-source Voltage (VGS = 0)
VDGR
VGS
ID
ID
Drain- gate Voltage (RGS = 20 kΩ)
Gate-source Voltage
Drain Current (continuous) at Tc = 25 oC
Drain Current (continuous) at Tc = 100 oC
IDM(•) Drain Current (pulsed)
Ptot Total Dissipation at Tc = 25 oC
Derating Factor
VISO Insulation Withstand Voltage (DC)
dV/dt Peak Diode Recovery voltage slope
Tstg Storage Temperature
Tj Max. Operating Junction Temperature
(•) Pulse width limited by safe operating area
’ New RDS (on) spec. starting from JULY 98
June 1998
Value
Unit
STP16NE06 STP16NE06FP
60 V
60 V
± 20
V
16 11 A
10 7 A
64 64 A
60 30 W
0.4 0.2 W/oC
2000
V
6
-65 to 175
175
(1) ISD ≤ 16 A, di/dt ≤ 200 A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX
V/ns
oC
oC
1/9
1 page Gate Charge vs Gate-source Voltage
Capacitance Variations
STP16NE06/FP
www.DataSheet4U.com
Normalized Gate Threshold Voltage vs
Temperature
Normalized On Resistance vs Temperature
Source-drain Diode Forward Characteristics
5/9
5 Page |
Páginas | Total 9 Páginas | |
PDF Descargar | [ Datasheet P16NE06FP.PDF ] |
Número de pieza | Descripción | Fabricantes |
P16NE06FP | STP16NE06FP | STMicroelectronics |
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