EN29LV800A Datasheet PDF - Eon Silicon Solution
| Part Number | EN29LV800A | |
| Description | 8 Megabit (1024K x 8-bit / 512K x 16-bit) Flash Memory Boot Sector Flash Memory | |
| Manufacturers | Eon Silicon Solution | |
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EN29LV800A
EN29LV800A
8 Megabit (1024K x 8-bit / 512K x 16-bit) Flash Memory
Boot Sector Flash Memory, CMOS 3.0 Volt-only
FEATURES
• Single power supply operation
- Full voltage range: 2.7-3.6 volt read and write
operations for battery-powered applications.
- Regulated voltage range: 3.0-3.6 volt read
and write operations and for compatibility with
high performance 3.3 volt microprocessors.
• Manufactured on 0.18 µm triple-metal double
poly triple-well CMOS Flash Technology
• High performance
www.DataSheet-4UA.cccoemss times as fast as 55 ns
• Low power consumption (typical values at 5
MHz)
- 7 mA typical active read current
- 15 mA typical program/erase current
- 1 µA typical standby current (standard access
time to active mode)
• Flexible Sector Architecture:
- One 16-Kbyte, two 8-Kbyte, one 32-Kbyte,
and fifteen 64-Kbyte sectors (byte mode)
- One 8-Kword, two 4-Kword, one 16-Kword
and fifteen 32-Kword sectors (word mode)
• Sector protection:
- Hardware locking of sectors to prevent
program or erase operations within individual
sectors
Additionally, temporary Sector Unprotect
allows code changes in previously locked
sectors.
• High performance program/erase speed
- Byte/Word program time: 8µs typical
- Sector erase time: 500ms typical
• JEDEC Standard Embedded Erase and
Program Algorithms
• JEDEC standard DATA# polling and toggle
bits feature
• Single Sector and Chip Erase
• Sector Unprotect Mode
• Erase Suspend / Resume modes:
Read or program another Sector during
Erase Suspend Mode
• Low Vcc write inhibit < 2.5V
• Minimum 1,000K endurance cycle
• Package Options
- 48-pin TSOP (Type 1)
- 48-ball 6mm x 8mm FBGA
• Commercial and industrial temperature
Range
GENERAL DESCRIPTION
The EN29LV800A is an 8-Megabit, electrically erasable, read/write non-volatile flash memory,
organized as 1,048,576 bytes or 524,288 words. Any byte can be programmed typically in 8µs.
The EN29LV800A features 3.0V voltage read and write operation, with access time as fast as 55ns
to eliminate the need for WAIT statements in high-performance microprocessor systems.
The EN29LV800A has separate Output Enable (OE#), Chip Enable (CE#), and Write Enable (WE#)
controls, which eliminate bus contention issues. This device is designed to allow either single
Sector or full chip erase operation, where each sector can be individually protected against
program/erase operations or temporarily unprotected to erase or program. The device can sustain
a minimum of 1,000K program/erase cycles on each sector.
This Data Sheet may be revised by subsequent versions 1
or modifications due to changes in technical specifications.
©2004 Eon Silicon Solution, Inc., www.essi.com.tw
Rev. C, Issue Date: 2005/01/10
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EN29LV800A
TABLE 2B. BOTTOM BOOT BLOCK SECTOR ARCHITECTURE
Sector
ADDRESS RANGE
(X16)
(X8)
SECTOR
SIZE
(Kbytes/ A18 A17 A16 A15 A14 A13 A12
Kwords)
18 78000h-7FFFFh F0000h – FFFFFh 64/32 1 1 1 1 X X X
17
70000h-77FFFh E0000h – EFFFFh 64/32
1 1 1 0XXX
16 68000h-6FFFFh D0000h – DFFFFh 64/32 1 1 0 1 X X X
www.DataSheet4U.1c5om 60000h-67FFFh
14 58000h-5FFFFh
C0000h – CFFFFh
B0000h - BFFFFh
64/32
64/32
1 1 0 0XXX
1 0 1 1XXX
13
50000h-57FFFh A0000h - AFFFFh
64/32
1 0 1 0XXX
12 48000h-4FFFFh 90000h – 9FFFFh 64/32 1 0 0 1 X X X
11
40000h-47FFFh 80000h – 8FFFFh
64/32
1 0 0 0XXX
10
38000h-3FFFFh 70000h –7FFFFh
64/32
0 1 1 1XXX
9
30000h-37FFFh 60000h – 6FFFFh
64/32
0 1 1 0XXX
8
28000h-2FFFFh 50000h – 5FFFFh
64/32
0 1 0 1XXX
7
20000h-27FFFh 40000h – 4FFFFh
64/32
0 1 0 0XXX
6
18000h-1FFFFh 30000h – 3FFFFh
64/32
0 0 1 1XXX
5
10000h-17FFFh 20000h – 2FFFFh
64/32
0 0 1 0XXX
4
08000h-0FFFFh 10000h – 1FFFFh
64/32
0 0 0 1XXX
3
04000h-07FFFh 08000h – 0FFFFh
32/16
0 0 0 0 1XX
2 03000h-03FFFh 06000h – 07FFFh 8/4 0 0 0 0 0 1 1
1 02000h-02FFFh 04000h – 05FFFh 8/4 0 0 0 0 0 1 0
0 00000h-01FFFh 00000h – 03FFFh 16/8 0 0 0 0 0 0 X
This Data Sheet may be revised by subsequent versions
5
or modifications due to changes in technical specifications.
©2004 Eon Silicon Solution, Inc., www.essi.com.tw
Rev. C, Issue Date: 2005/01/10
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Part DetailsOn this page, you can learn information such as the schematic, equivalent, pinout, replacement, circuit, and manual for EN29LV800A electronic component. |
| Information | Total 30 Pages | |
| Link URL | [ Copy URL to Clipboard ] | |
| Download | [ EN29LV800A.PDF Datasheet ] | |
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Featured Datasheets
| Part Number | Description | MFRS |
| EN29LV800 | The function is 8 Megabit (1024K x 8-bit / 512K x 16-bit) Flash Memory Boot Sector Flash Memory. Eon Silicon Solution | |
| EN29LV800A | The function is 8 Megabit (1024K x 8-bit / 512K x 16-bit) Flash Memory Boot Sector Flash Memory. Eon Silicon Solution | |
| EN29LV800B | The function is 8 Megabit (1024K x 8-bit / 512K x 16-bit) Flash Memory Boot Sector Flash Memory. Eon Silicon Solution | |
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