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PDF AP9926O Data sheet ( Hoja de datos )
| Número de pieza | AP9926O | |
| Descripción | N-CHANNEL ENHANCEMENT MODE POWER MOSFET | |
| Fabricantes | Advanced Power Electronics | |
| Logotipo |  |
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Advanced Power
Electronics Corp.
AP9926O
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ Low on-resistance
▼ Capable of 2.5V gate drive
www.DataSheet4U▼.comLow drive current
▼ Surface mount package
G2
S2
S2
D2
TSSOP-8
G1
S1
S1
D1
Description
The Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, ultra low on-resistance and
cost-effectiveness.
BVDSS
RDS(ON)
ID
20V
28mΩ
4.6A
D1
G1 G2
S1
D2
S2
Absolute Maximum Ratings
Symbol
Parameter
VDS
VGS
ID@TA=25℃
ID@TA=70℃
IDM
PD@TA=25℃
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current3
Continuous Drain Current3
Pulsed Drain Current1
Total Power Dissipation
Linear Derating Factor
TSTG
TJ
Storage Temperature Range
Operating Junction Temperature Range
Thermal Data
Symbol
Rthj-a
Parameter
Thermal Resistance Junction-ambient3
Rating
20
±8
4.6
3.7
20
1
0.008
-55 to 150
-55 to 150
Units
V
V
A
A
A
W
W/℃
℃
℃
Max.
Value
125
Unit
℃/W
Data and specifications subject to change without notice
20071902
1 page  
AP9926O
12
I D =4.6A
10
www.DataSheet4U.com8
6
V DS =10V
V DS =15V
V DS =20V
4
2
0
0 5 10 15 20 25
Q G , Total Gate Charge (nC)
Fig 9. Gate Charge Characteristics
1000 f=1.0MHz
Ciss
Coss
100
Crss
10
1 5 9 13 17 21 25 29
V DS (V)
Fig 10. Typical Capacitance Characteristics
100
10
T j =150 o C
T j =25 o C
1
0.1
0.01
0
0.4 0.8
V SD (V)
1.2
1.6
Fig 11. Forward Characteristic of
Reverse Diode
1.6
1.4
1.2
1
0.8
0.6
0.4
0.2
-50 0
50 100 150
Junction Temperature ( o C )
Fig 12. Gate Threshold Voltage v.s.
Junction Temperature
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet AP9926O.PDF ] | |
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