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RF3133 Schematic ( PDF Datasheet ) - RF Monolithics

Teilenummer RF3133
Beschreibung QUAD-BAND GSM850/GSM/DCS/PCS POWER AMP MODULE
Hersteller RF Monolithics
Logo RF Monolithics Logo 




Gesamt 16 Seiten
RF3133 Datasheet, Funktion
www.DataSheet4U.com
0
Typical Applications
• 3V Quad-Band GSM Handsets
• Commercial and Consumer Systems
• Portable Battery-Powered Equipment
RF3133
QUAD-BAND GSM850/GSM/DCS/PCS
POWER AMP MODULE
• GSM850, EGSM900, DCS/PCS Products
• GPRS Class 12 Compatible
Product Description
The RF3133 is a high-power, high-efficiency power ampli-
fier module with integrated power control. The device is
self-contained with 50input and output terminals. The
power control function is also incorporated, eliminating
the need for directional couplers, detector diodes, power
control ASICs and other power control circuitry; this
allows the module to be driven directly from the DAC out-
put. The device is designed for use as the final RF ampli-
fier in GSM850, EGSM900, DCS and PCS handheld
digital cellular equipment and other applications in the
824MHz to 849MHz, 880MHz to 915MHz, 1710MHz to
1785MHz, and 1850MHz to 1910MHz bands. On-board
power control provides over 37dB of control range with an
analog voltage input; and, power down with a logic “low”
for standby operation.
1
10.00
± 0.10
7.00
± 0.10
NOTES:
1 Shaded areas represent pin 1 location.
1.40
1.25
0.450
± 0.075
9.90 TYP
9.10 TYP
8.50
6.90 TYP
6.10 TYP
3.90 TYP
3.10 TYP
1.50
0.90 TYP
0.10 TYP
0.00
1
8.40 TYP
7.60 TYP
6.00
5.40 TYP
4.60 TYP
4.00
2.40 TYP
1.60 TYP
Optimum Technology Matching® Applied
Si BJT
!GaAs HBT
GaAs MESFET
Si Bi-CMOS
!SiGe HBT
Si CMOS
InGaP/HBT
GaN HEMT
SiGe Bi-CMOS
DCS IN 1
BAND SELECT 2
TX ENABLE 3
VBATT 4
VREG 5
VRAMP 6
GSM IN 7
12
8
11 DCS OUT
10 VCC OUT
9 GSM OUT
Functional Block Diagram
Package Style: Module
Features
• Complete Power Control Solution
• Single 2.9V to 5.5V Supply Voltage
• +35dBm GSM Output Power at 3.5V
• +33dBm DCS/PCS Output Power at 3.5V
• 55% GSM and 52% DCS/PCS ηEFF
Ordering Information
RF3133
RF3133 PCBA
Quad-Band GSM850/GSM/DCS/PCS Power Amp
Module
Fully Assembled Evaluation Board
RF Micro Devices, Inc.
7628 Thorndike Road
Greensboro, NC 27409, USA
Tel (336) 664 1233
Fax (336) 664 0454
http://www.rfmd.com
Rev A4 030527
2-459






RF3133 Datasheet, Funktion
www.DataSheet4U.com
RF3133
Pin
1
2
3
4
5
6
7
8
9
10
11
12
Pkg
Base
Function Description
DCS/PCS IN RF input to the DCS band. This is a 50input.
BAND
SELECT
Allows external control to select the GSM or DCS band with a logic high
or low. A logic low enables the GSM band whereas a logic high enables
the DCS band.
TX ENABLE This signal enables the PA module for operation with a logic high. Once
TX Enable is asserted the RF output level will increase to -2dBm.
VBATT
Power supply for the module. This should be connected to the battery.
VREG
Regulated voltage input for power control function. (2.8V nom)
VRAMP
Ramping signal from DAC. A simple RC filter may need to be con-
nected between the DAC output and the VRAMP input depending on
the baseband selected.
GSM IN RF input to the GSM band. This is a 50input.
VCC2
Controlled voltage input to driver stage for GSM bands. This voltage is
part of the power control function for the module. This node must be
connected to VCC out.
GSM OUT RF output for the GSM band. This is a 50output. The output load line
matching is contained internal to the package.
VCC OUT
Controlled voltage output to feed VCC2. This voltage is part of the
power control function for the module. It can not be connected to any-
thing other than VCC2, nor can any component be placed on this node
(i.e., decoupling capacitor).
DCS/PCS
OUT
RF output for the DCS band. This is a 50output. The output load line
matching is contained internal to the package.
VCC2
Controlled voltage input to DCS driver stage. This voltage is part of the
power control function for the module. This node must be connected to
VCC out.
GND
Interface Schematic
2-464
Rev A4 030527

6 Page









RF3133 pdf, datenblatt
www.DataSheet4U.com
RF3133
The switching transients due to low battery conditions are regulated by incorporating the following relationship limiting
the maximum VRAMP voltage (Equation 2). Although no compensation is required for typical battery conditions, the bat-
tery compensation required for extreme conditions is covered by the relationship in Equation 4. This should be added to
the terminal software.
VRAMP
3--
8
VBATT
+
0.18
(Eq. 4)
Note: Output power is limited by battery voltage. The relationship in Equation 4 does not limit output power. Equation 4
limits the VRAMP voltage to correspond with the battery voltage.
Due to reactive output matches, there are output power variations across frequency. There are a number of components
that can make the effects greater or less.
The components following the power amplifier often have insertion loss variation with respect to frequency. Usually, there
is some length of microstrip that follows the power amplifier. There is also a frequency response found in directional cou-
plers due to variation in the coupling factor over frequency, as well as the sensitivity of the detector diode. Since the
RF3133 does not use a directional coupler with a diode detector, these variations do not occur.
Input impedance variation is found in most GSM power amplifiers. This is due to a device phenomena where CBE and
CCB (CGS and CSG for a FET) vary over the bias voltage. The same principle used to make varactors is present in the
power amplifiers. The junction capacitance is a function of the bias across the junction. This produces input impedance
variations as the Vapc voltage is swept. Although this could present a problem with frequency pulling the transmit VCO
off frequency, most synthesizer designers use very wide loop bandwidths to quickly compensate for frequency variations
due to the load variations presented to the VCO.
The RF3133 presents a very constant load to the VCO. This is because all stages of the RF3133 are run at constant
bias. As a result, there is constant reactance at the base emitter and base collector junction of the input stage to the
power amplifier.
Noise power in PA's where output power is controlled by changing the bias voltage is often a problem when backing off of
output power. The reason is that the gain is changed in all stages and according to the noise formula (Equation 5),
FTOT
=
F1
+
-F----2----–-----1-
G1
+
--F----3-----–----1----
G1 G2
(Eq. 5)
the noise figure depends on noise factor and gain in all stages. Because the bias point of the RF3133 is kept constant
the gain in the first stage is always high and the overall noise power is not increased when decreasing output power.
Power control loop stability often presents many challenges to transmitter design. Designing a proper power control loop
involves trade-offs affecting stability, transient spectrum and burst timing.
In conventional architectures the PA gain (dB/ V) varies across different power levels, and as a result the loop bandwidth
also varies. With some power amplifiers it is possible for the PA gain (control slope) to change from 100dB/V to as high
as 1000dB/V. The challenge in this scenario is keeping the loop bandwidth wide enough to meet the burst mask at low
slope regions which often causes instability at high slope regions.
The RF3133 loop bandwidth is determined by internal bandwidth and the RF output load and does not change with
respect to power levels. This makes it easier to maintain loop stability with a high bandwidth loop since the bias voltage
and collector voltage do not vary.
An often overlooked problem in PA control loops is that a delay not only decreases loop stability it also affects the burst
timing when, for instance the input power from the VCO decreases (or increases) with respect to temperature or supply
voltage. The burst timing then appears to shift to the right especially at low power levels. The RF3133 is insensitive to a
change in input power and the burst timing is constant and requires no software compensation.
2-470
Rev A4 030527

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