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PDF W80NF55-08 Data sheet ( Hoja de datos )
| Número de pieza | W80NF55-08 | |
| Descripción | STW80NF55-08 | |
| Fabricantes | STMicroelectronics | |
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STW80NF55-08
N-CHANNEL 55V - 0.0065Ω - 80A TO-247
STripFET™ POWER MOSFET
TYPE
VDSS
RDS(on)
STW80NF55-08
55 V < 0.008 Ω
s TYPICAL RDS(on) = 0.0065Ω
s EXCEPTIONAL dv/dt CAPABILITY
s 100% AVALANCHE TESTED
s LOW THRESHOLD DRIVE
ID
80 A
DESCRIPTION
This Power MOSFET is the latest development of
STMicroelectronics unique "Single Feature Size™"
strip-based process. The resulting transistor shows
extremely high packing density for low on-resis-
tance, rugged avalanche characteristics and less
critical alignment steps therefore a remarkable
manufacturing reproducibility.
APPLICATIONS
s DC-AC & DC-DC CONVERTERS
s HIGH CURRENT, HIGH SPEED SWITCHING
s SOLENOID AND RELAY DRIVERS
s MOTOR CONTROL, AUDIO AMPLIFIERS
3
2
1
TO-247
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
VDS Drain-source Voltage (VGS = 0)
VDGR
Drain-gate Voltage (RGS = 20 kΩ)
VGS Gate- source Voltage
ID (*)
Drain Current (continuous) at TC = 25°C
ID
IDM (l)
Drain Current (continuous) at TC = 100°C
Drain Current (pulsed)
PTOT
Total Dissipation at TC = 25°C
Derating Factor
EAS (1) Single Pulse Avalanche Energy
Tstg Storage Temperature
Tj Max. Operating Junction Temperature
(q) Pulse width limited by safe operating area
Value
55
55
±20
80
80
320
300
2
870
–65 to 175
175
(1) Starting Tj = 25°C, ID = 40A, VDD = 40V
(*) Current Limited by wire bonding
September 2002
Unit
V
V
V
A
A
A
W
W/°C
mJ
°C
°C
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1 page  
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STW80NF55-08
Normalized Gate Thereshold Voltage vs Temp. Normalized On Resistance vs Temperature
Source-drain Diode Forward Characteristics
NormalizedBreakdownVoltage vs Temperature
5/8
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| PDF Descargar | [ Datasheet W80NF55-08.PDF ] | |
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