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D2012 Schematic ( PDF Datasheet ) - Toshiba Semiconductor

Teilenummer D2012
Beschreibung NPN Transistor - 2SD2012
Hersteller Toshiba Semiconductor
Logo Toshiba Semiconductor Logo 




Gesamt 5 Seiten
D2012 Datasheet, Funktion
TOSHIBA Transistor Silicon NPN Triple Diffused Type
2SD2012
Audio Frequency Power Amplifier Applications
2SD2012
Unit: mm
Low saturation voltage: VCE (sat) = 0.4 V (typ.) (IC = 2A / IB = 0.2A)
High power dissipation: PC = 25 W (Tc = 25°C)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Collector power
dissipation
Ta = 25°C
Tc = 25°C
Junction temperature
Storage temperature range
VCBO
VCEO
VEBO
IC
IB
PC
Tj
Tstg
60
60
7
3
0.5
2.0
25
150
55 to 150
V
V
V
A
A
W
°C
°C
JEDEC
JEITA
Note 1: Using continuously under heavy loads (e.g. the application of high
TOSHIBA
2-10R1A
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
Weight: 1.7 g (typ.)
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
1 2009-12-01





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