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PDF D882 Data sheet ( Hoja de datos )
| Número de pieza | D882 | |
| Descripción | Plastic-Encapsulated Transistors | |
| Fabricantes | TRANSYS Electronics | |
| Logotipo |  |
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 1. - NPN, Equivalent (Datasheet PDF)  Hay una vista previa y un enlace de descarga de D882 (archivo pdf) en la parte inferior de esta página. Total 1 Páginas | ||
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Electronics
LIMITED
TO-251/252 Plastic-Encapsulated Transistors
D882 TRANSISTOR (NPN)
FEATURES
Power dissipation
PCM:
1.25 W (Tamb=25℃)
Collector current
ICM: 3 A
Collector-base voltage
V(BR)CBO:
40 V
Operating and storage junction temperature range
TJ, Tstg: -55℃ to +150℃
TO-251
TO-252-2
6. 5 0¡ À0. 10
5. 3 0¡ À0. 05
0. 5 1¡ À0 . 03
2 . 30¡ À0. 05
5¡ ã
0. 80¡ À0. 0 5
0. 6 0¡ À0. 0 5
5¡ ã
5¡ ã
1. BASE
2. 3 0¡ À0. 05
2. 3 0¡ À0. 0 5
123
1 . 20
0. 51 ¡ À0 . 03
2. COLLECTOR
6. 50¡ À0. 15
5. 30¡ À0. 10
0. 51¡ À0. 05
2. 30¡ À0. 10
3. EMITTER
1. 20
0. 51¡ À0. 10
0¡ 0«. 10
5¡ ã
5¡ ã
5¡ ã
0. 80¡ À0. 10
2. 30¡ À0. 10
0. 60¡ À0. 10
2. 30¡ À0. 10
123
0¡¡ ã«9¡ ã
0. 51
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter
Symbol Test conditions MIN TYP MAX UNIT
Collector-base breakdown voltage
V(BR)CBO
Ic= 100µA, IE=0
40
V
Collector-emitter breakdown voltage V(BR)CEO
Ic= 10 mA, IB=0
30
V
Emitter-base breakdown voltage
V(BR)EBO
IE= 100µA, IC=0
6
V
Collector cut-off current
ICBO VCB= 40V, IE=0
1 µA
Collector cut-off current
ICEO VCE= 30V, IB=0
10 µA
Emitter cut-off current
IEBO VEB= 6V, IC=0
1 µA
DC current gain
hFE(1)
hFE(2)
VCE= 2V, IC= 1A
VCE= 2V, IC= 100mA
60
32
400
Collector-emitter saturation voltage
VCE (sat)
IC= 2A, IB= 0.2 A
0.5 V
Base-emitter saturation voltage
Transition frequency
VBE (sat)
fT
IC= 2A, IB= 0.2 A
VCE= 5V, Ic=0.1A
f =10MHz
50
1.5 V
MHz
CLASSIFICATION OF hFE(1)
Rank
R
Range
60-120
O
100-200
Y
160-320
GR
200-400
1 page | ||
| Páginas | Total 1 Páginas | |
| PDF Descargar | [ Datasheet D882.PDF ] | |
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