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PD84008L-E Schematic ( PDF Datasheet ) - ST Microelectronics

Teilenummer PD84008L-E
Beschreibung Transistors
Hersteller ST Microelectronics
Logo ST Microelectronics Logo 




Gesamt 14 Seiten
PD84008L-E Datasheet, Funktion
www.DataSheet4U.com
PD84008L-E
RF power transistor, LdmoST plastic family
N-channel enhancement-mode lateral MOSFETs
Preliminary Data
Features
Excellent thermal stability
Common source configuration
POUT = 8 W with 13 dB gain @ 870 MHz / 7.5 V
Plastic package
ESD protection
In compliance with the 2002/95/EC european
directive
PowerFLATTM (5mm x 5mm)
Description
The is a common source N-channel,
enhancement-mode lateral Field-Effect RF power
transistor. It is designed for high gain, broadband
commercial and industrial applications. It
operates at 7.5 V in common source mode at
frequencies of up to 1 GHz. boasts the excellent
gain, linearity and reliability of ST’s latest LDMOS
technology mounted in leadless SMD plastic RF
power package , PowerFLATTM. ’s superior
linearity performance makes it an ideal solution
for portable radio applications.
Figure 1. Pin connection
Table 1. Device summary
Order code
PD84008L-E
Marking
84008
Package
PowerFLATTM
Packing
Tape and reel
December 2007
Rev 1
This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to
change without notice.
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PD84008L-E Datasheet, Funktion
www.DataSheet4U.com
Typical performance
4 Typical performance
PD84008L-E
Figure 3. Capacitances vs drain voltage
120
100
80
60
40
20
0
0 10 20 30 40 50
Coss
Crss
Cis s
VDS (V )
Figure 4.
6
5
DC output characterisptics
Tamb = - 40 °C
4
3
2
1
0
0 5 10
VDS[V]
Vgs = 4.0V
Vgs = 4.5V
Vgs = 5.0V
Vgs = 5.5V
Vgs = 6.0V
Figure 5.
6
5
DC output characteristics
Tamb = + 20 °C
4
3
2
1
0
0 5 10
V DS[V ]
Vgs = 4.0V
Vgs = 5.0V
Vgs = 4.5V
Vgs = 5.5V
Vgs = 6.0V
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PD84008L-E pdf, datenblatt
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Package mechanical data
Figure 13. PowerFLAT™ (5x5) recommended footprint
PD84008L-E
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