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PDF P5N50 Data sheet ( Hoja de datos )
| Número de pieza | P5N50 | |
| Descripción | IXTP5N50P | |
| Fabricantes | IXYS Corporation | |
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Advance Technical Information
PolarHVTM
Power MOSFET
N-Channel Enhancement Mode
IXTA 5N50P
IXTP 5N50P
IXTY 5N50P
VDSS = 500 V
ID25 = 4.8 A
RDS(on) ≤ 1.4 Ω
Symbol
V
DSS
VDGR
VGSS
V
GSM
ID25
IDM
IAR
EAR
EAS
dv/dt
P
D
TJ
TJM
T
stg
TL
Test Conditions
T
J
= 25°C to 150°C
TJ = 25°C to 150°C; RGS = 1 MΩ
Continuous
Transient
TC = 25°C
TC = 25°C, pulse width limited by TJM
TC = 25°C
TC = 25°C
TC = 25°C
IS ≤ IDM, di/dt ≤ 100 A/μs, VDD ≤ VDSS,
TJ ≤ 150°C, RG = 20 Ω
T
C
= 25°C
1.6 mm (0.062 in.) from case for 10 s
Maximum tab temperature for soldering
TO-263 package for 10s
Maximum Ratings
500 V
500 V
± 30
± 40
V
V
4.8 A
10 A
5A
20 mJ
250 mJ
TO-263 (IXTA)
G
S
TO-220 (IXTP)
10 V/ns
G DS
89
-55 ... +150
150
-55 ... +150
300
260
W
°C TO-252 (IXTY)
°C
°C
G
°C
°C S
(TAB)
(TAB)
(TAB)
Md
Weight
Mounting torque
TO-220
TO-263
TO-252
(TO-220)
1.13/10 Nm/lb.in.
4g
3g
0.8 g
Symbol
Test Conditions
(TJ = 25°C, unless otherwise specified)
V
DSS
V
GS
=
0
V,
I
D
=
250
μA
Characteristic Values
Min. Typ. Max.
500 V
VGS(th)
VDS = VGS, ID = 50μA
3.0 5.0 V
I
GSS
V
GS
=
±30
V,
DC
V
DS
=
0
±100 nA
IDSS
VDS = VDSS
VGS = 0 V
TJ = 125°C
5 μA
50 μA
RDS(on)
VGS = 10 V, ID = 0.5 ID25
Pulse test, t ≤ 300 μs, duty cycle d ≤ 2 %
1.4 Ω
G = Gate
S = Source
D = Drain
TAB = Drain
Features
z International standard packages
z Unclamped Inductive Switching (UIS)
rated
z Low package inductance
- easy to drive and to protect
Advantages
z Easy to mount
z Space savings
z High power density
© 2005 IXYS All rights reserved
DS99446(08/05)
1 page  
www.DataSheet4U.com
10.00
IXTA 5N50P
Fig. 13. Maximum Transient Thermal Resistance
IXTP 5N50P
IXTY 5N50P
1.00
0.10
0.01
0.00001
0.0001
0.001
0.01
0.1
Pulse Width - Seconds
1
10
© 2005 IXYS All rights reserved
5 Page | ||
| Páginas | Total 5 Páginas | |
| PDF Descargar | [ Datasheet P5N50.PDF ] | |
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