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PDF DBT236-600 Data sheet ( Hoja de datos )
| Número de pieza | DBT236-600 | |
| Descripción | Triacs | |
| Fabricantes | DnI | |
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DBT236-600
Triacs / Sensitive Gate
Features
Repetitive Peak Off-State Voltage : 600V
R.M.S On-State Current ( IT(RMS)= 6 A )
High Commutation dv/dt
Sensitive Gate Triggering 4 Mode
Non-isolated Type
Symbol
2.T2
1.T1
3.Gate
BVDRM = 600V
IT(RMS) = 6 A
ITSM = 60 A
TO-220
General Description
This device is sensitive gate triac suitable for direct coupling
to TTL, HTL, CMOS and application such as various logic
functions, AC switching applications, phase control applica-
tion such as fan speed, light controllers and home appliance
equipment.
123
Absolute Maximum Ratings ( TJ = 25°C unless otherwise specified )
Symbol
Parameter
Condition
VDRM
IT(RMS)
ITSM
I2t
Repetitive Peak Off-State Voltage
R.M.S On-State Current
Surge On-State Current
I2t for Fusing
Sine wave, 50 to 60 Hz, Gate open
TC =101 °C, Full Sine wave
One Cycle, 50Hz/60Hz, Peak,
Non-Repetitive
tp = 10ms
PGM
PG(AV)
IGM
VGM
TJ
TSTG
Peak Gate Power Dissipation
Average Gate Power Dissipation
Peak Gate Current
Peak Gate Voltage
Operating Junction Temperature
Storage Temperature
TC = 101 °C, Pulse width 1.0us
Over any 20ms period
tp = 20us, TJ=125°C
tp = 20us, TJ=125°C
Ratings
600
6.0
60/66
18
3.0
0.3
2.0
10
- 40 ~ 125
- 40 ~ 150
Units
V
A
A
A2s
W
W
A
V
°C
°C
April, 2005. Rev.0
copyright @ D&I Semiconductor Co., Ltd., All rights reserved.
1/5
1 page  
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DBT236-600
TO-220 Package Dimension
Dim.
mm
Inch
Min. Typ. Max. Min. Typ. Max.
A 9.7
10.1 0.382
0.398
B 6.3
6.7 0.248
0.264
C 9.0
9.47 0.354
0.373
D 12.8
13.3 0.504
0.524
E 1.2
1.4 0.047
0.055
F 1.7
0.067
G 2.5
0.098
H 3.0
3.4 0.118
0.134
I 1.25
1.4 0.049
0.055
J 2.4
2.7 0.094
0.106
K 5.0
5.15 0.197
0.203
L 2.2
2.6 0.087
0.102
M 1.25
1.55 0.049
0.061
N 0.45
0.6 0.018
0.024
O 0.6
1.0 0.024
0.039
3.6 0.142
E
B
F
C
A
HI
G
D
L
1
2
3
J
K
N
M
1. T1
2. T2
3. Gate
O
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