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PDF DBT134-800 Data sheet ( Hoja de datos )
| Número de pieza | DBT134-800 | |
| Descripción | Triacs | |
| Fabricantes | DnI | |
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DBT134 - 800
Triacs / Sensitive Gate
Features
Repetitive Peak Off-State Voltage : 800V
R.M.S On-State Current ( IT(RMS)= 4 A )
High Commutation dv/dt
Sensitive Gate Triggering 4 Mode
Symbol
2.T2
1.T1
3.Gate
General Description
This device is sensitive gate triac suitable for direct coupling
to TTL, HTL, CMOS and application such as various logic
functions, low power AC switching applications, such as fan
speed, small light controllers and home appliance equipment.
BVDRM = 800V
IT(RMS) = 4 A
ITSM = 25 A
TO-126
3
2
1
Absolute Maximum Ratings ( TJ = 25°C unless otherwise specified )
Symbol
Parameter
Condition
VDRM
IT(RMS)
ITSM
I2t
Repetitive Peak Off-State Voltage
R.M.S On-State Current
Surge On-State Current
I2t for Fusing
Sine wave, 50 to 60 Hz, Gate open
TC = 104 °C, Full Sine wave
One Cycle, 50Hz/60Hz, Peak,
Non-Repetitive
tp= 10ms
PGM
PG(AV)
IGM
VGM
TJ
TSTG
Peak Gate Power Dissipation
Average Gate Power Dissipation
Peak Gate Current
Peak Gate Voltage
Operating Junction Temperature
Storage Temperature
TC = 104 °C, Pulse width 1.0us
Over any 20ms period
tp = 20us, TJ=125°C
tp = 20us, TJ=125°C
Ratings
800
4
25/27
3.1
5
0.5
2
5
- 40 ~ 125
- 40 ~ 150
Units
V
A
A
A2s
W
W
A
V
°C
°C
Sept. 2006, Rev.0
copyright @ D&I Semiconductor Co., Ltd., All rights reserved.
1/5
1 page  
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DBT134 - 800
TO-126 Package Dimension
mm Inch
Dim.
Min. Typ. Max. Min. Typ. Max.
A 7.5
7.9 0.295
0.311
B 10.8
11.2 0.425
0.441
C 14.2
14.7 0.559
0.579
D 2.7
2.9 0.106
0.114
E 3.8
0.150
F 2.5
0.098
G 1.2
1.5 0.047
0.059
H 2.3
0.091
I 4.6
0.181
J 0.48
0.62 0.019
0.024
K 0.7
0.86 0.028
0.034
L 1.4
0.055
3.2 0.126
B
F
C
A
E
1
2
3
D
G
H
I
JK
L
1. T1
2. T2
3. Gate
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| PDF Descargar | [ Datasheet DBT134-800.PDF ] | |
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