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Teilenummer | DCR6C60 |
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Beschreibung | Standard Gate SCR | |
Hersteller | DnI | |
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Gesamt 5 Seiten www.DataSheet4U.com
DCR6C60
Standard Gate
Silicon Controlled -
Rectifiers
Symbol
2. Anode
Features
Repetitive Peak Off-State Voltage : 600V
R.M.S On-State Current ( IT(RMS)= 6 A )
Low On-State Voltage (1.4V(Typ.)@ ITM)
Pb - Free Packages are Available
General Description
1.Cathode
3.Gate
Standard gate triggering thyristor is suitable for the application
where requiring high bidirectional blocking voltage capability and
also suitable for over voltage protection ,motor control circuit in
power tool, inrush current limit circuit and heating control system.
BVDRM = 600V
IT(RMS) = 3.8 A
ITSM = 6A
TO-126
3
2
1
Absolute Maximum Ratings ( TJ = 25°C unless otherwise specified )
Symbol
Parameter
Condition
VDRM
IT(AV)
IT(RMS)
ITSM
I2t
Repetitive Peak Off-State Voltage
Average On-State Current
R.M.S On-State Current
Surge On-State Current
I2t for Fusing
sine wave,50 to 60Hz,gate open
half sine wave : TC =106 °C
180° Conduction Angle
1/2 Cycle, 60Hz, Sine Wave
Non-Repetitive
t = 8.3ms
di/dt Critical rate of rise of on-state current
PGM
Forward Peak Gate Power Dissipation
TC = 106 °C, pulse width 1.0
PG(AV)
Forward Average Gate Power Dissipation TC = 106 °C,pulse width 1.0
IFGM
Forward Peak Gate Current
TC = 106 °C, pulse width 1.0
VRGM
TJ
TSTG
Reverse Peak Gate Voltage
Operating Junction Temperature
Storage Temperature
TC =106 °C, pulse width 1.0
Ratings
600
3.8
6
40
21
50
5
0.5
2
5.0
- 40 ~ 125
- 40 ~ 150
Units
V
A
A
A
A2s
A/
W
W
A
V
°C
°C
April, 2005. Rev.0
copyright @ D&I Semiconductor Co., Ltd., All rights reserved.
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PDF Download | [ DCR6C60 Schematic.PDF ] |
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