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DFP50N06 Schematic ( PDF Datasheet ) - DnI

Teilenummer DFP50N06
Beschreibung N-Channel MOSFET
Hersteller DnI
Logo DnI Logo 




Gesamt 7 Seiten
DFP50N06 Datasheet, Funktion
www.DataSheet4U.com
DFP50N06
N-Channel MOSFET
Features
RDS(on) (Max 0.022 )@VGS=10V
Gate Charge (Typical 36nC)
Improved dv/dt Capability
High ruggedness
100% Avalanche Tested
1.Gate
2.Drain
3.Source
General Description
This N-channel enhancement mode field-effect power transistor
using DI semiconductor’s advanced planar stripe, DMOS technol-
ogy intended for battery operated systems like a DC-DC converter
motor control , ups ,audio amplifier.
Also, especially designed to minimize rds(on) , low gate charge
and high rugged avalanche characteristics.
BVDSS = 60V
RDS(ON) = 0.022 ohm
ID = 50A
TO-220
123
Absolute Maximum Ratings
Symbol
VDSS
ID
IDM
VGS
EAS
EAR
dv/dt
PD
TSTG, TJ
TL
Parameter
Drain to Source Voltage
Continuous Drain Current(@TC = 25°C)
Continuous Drain Current(@TC = 100°C)
Drain Current Pulsed
Gate to Source Voltage
Single Pulsed Avalanche Energy
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Total Power Dissipation(@TC = 25 °C)
Derating Factor above 25 °C
Operating Junction Temperature & Storage Temperature
Maximum Lead Temperature for soldering purpose,
1/8 from Case for 5 seconds.
(Note 1)
(Note 2)
(Note 1)
(Note 3)
Value
60
50
38
200
±25
642
12
7.0
120
0.8
- 55 ~ 175
300
Thermal Characteristics
Symbol
RθJC
RθCS
RθJA
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Case to Sink
Thermal Resistance, Junction-to-Ambient
Min.
-
-
-
Value
Typ.
-
0.5
-
Max.
1.25
-
62.5
May, 2005. Rev.1.
Copyright@ D&I Semiconductor Co., Ltd., Korea . All rights reserved
Units
V
A
A
A
V
mJ
mJ
V/ns
W
W/°C
°C
°C
Units
°C/W
°C/W
°C/W
1/7






DFP50N06 Datasheet, Funktion
www.DataSheet4U.com
DFP50N06
Fig. 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms
DUT
IS
Driver
RG
VGS
+
VDS
_
L
Same Type
as DUT
• dv/dt controlled by RG
• IS controlled by pulse period
VDD
VGS
( Driver )
IS
( DUT )
VDS
( DUT )
D = --GG--aa--tt-ee--PP--u-u-ll-ss-ee---PW--e-i-dr-ito-h-d-
10V
IFM , Body Diode Forward Current
di/dt
IRM
Body Diode Reverse Current
Body Diode Recovery dv/dt
Vf
Body Diode
Forward Voltage Drop
VDD
6/7
Copyright@ D&I Semiconductor Co., Ltd., Korea . All rights reserved

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