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DFU1N60 Schematic ( PDF Datasheet ) - DnI

Teilenummer DFU1N60
Beschreibung N-Channel MOSFET
Hersteller DnI
Logo DnI Logo 




Gesamt 7 Seiten
DFU1N60 Datasheet, Funktion
www.DataSheet4U.com
DFU1N60
N-Channel MOSFET
N-Channel MOSFET
Features
High ruggedness
RDS(on) (Max 11.5 )@VGS=10V
Gate Charge (Typical 7nC)
Improved dv/dt Capability
100% Avalanche Tested
1.Gate
2.Drain
3.Source
General Description
This N-channel enhancement mode field-effect power transistor
using DI semiconductor’s advanced planar stripe, DMOS technol-
ogy intended for off-line switch mode power supply.
Also, especially designed to minimize rds(on) and high rugged
avalanche characteristics. The I-PAK pkg is well suited for
charger SMPS and small power inverter application.
BVDSS = 600V
RDS(ON) = 11.5 ohm
ID = 1.0A
I-PAK
123
Absolute Maximum Ratings
Symbol
VDSS
ID
IDM
VGS
EAS
EAR
dv/dt
PD
TSTG, TJ
TL
Parameter
Drain to Source Voltage
Continuous Drain Current(@TC = 25°C)
Continuous Drain Current(@TC = 100°C)
Drain Current Pulsed
Gate to Source Voltage
Single Pulsed Avalanche Energy
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Total Power Dissipation(@TC = 25 °C)
Derating Factor above 25 °C
Operating Junction Temperature & Storage Temperature
Maximum Lead Temperature for soldering purpose,
1/8 from Case for 5 seconds.
Thermal Characteristics
Symbol
RθJC
RθCS
RθJA
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Case to Sink
Thermal Resistance, Junction-to-Ambient
Min.
-
-
-
(Note 1)
(Note 2)
(Note 1)
(Note 3)
Value
600
1.0
0.65
4.0
±30
52
3.0
4.5
30
0.23
- 55 ~ 150
300
Value
Typ.
-
-
-
Max.
4.2
50
110
Oct, 2004. Rev. 0.
Copyright@ D&I Semiconductor Co., Ltd., Korea. All rights reserved.
Units
V
A
A
A
V
mJ
mJ
V/ns
W
W/°C
°C
°C
Units
°C/W
°C/W
°C/W
1/7






DFU1N60 Datasheet, Funktion
www.DataSheet4U.com
DFU1N60
Fig. 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms
DUT
+
VDS
_
IS
L
Driver
RG
VGS
Same Type
as DUT
• dv/dt controlled by RG
• IS controlled by pulse period
VDD
VGS
( Driver )
IS
( DUT )
VDS
( DUT )
D
=
--G--a--t-e---P--u-l-s-e---W---i-d-t-h--
Gate Pulse Period
10V
IFM , Body Diode Forward Current
di/dt
IRM
Body Diode Reverse Current
Body Diode Recovery dv/dt
Vf
Body Diode
Forward Voltage Drop
VDD
6/7

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