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PDF DFF4N60 Data sheet ( Hoja de datos )
| Número de pieza | DFF4N60 | |
| Descripción | N-Channel MOSFET | |
| Fabricantes | DnI | |
| Logotipo |  |
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DFF4N60
N-Channel MOSFET
N-Channel MOSFET
Features
High ruggedness
RDS(on) (Max 2.5 )@VGS=10V
Gate Charge (Typical 25nC)
Improved dv/dt Capability
100% Avalanche Tested
1. Gate{
{ 2. Drain
{ 3. Source
BVDSS = 600V
RDS(ON) = 2.5 ohm
ID = 4A
General Description
This N-channel enhancement mode field-effect power transistor
using D& I semiconductor’s advanced planar stripe, DMOS technol-
ogy intended for off-line switch mode power supply.
Also, especially designed to minimize rds(on) and high rugged
avalanche characteristics. The TO-220F( Isolated ) pkg is well
suited for adaptor power unit and power inverter application.
TO-220F
123
Absolute Maximum Ratings
Symbol
VDSS
ID
IDM
VGS
EAS
EAR
dv/dt
PD
TSTG, TJ
TL
Parameter
Drain to Source Voltage
Continuous Drain Current(@TC = 25°C)*
Continuous Drain Current(@TC = 100°C)*
Drain Current Pulsed
Gate to Source Voltage
Single Pulsed Avalanche Energy
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Total Power Dissipation(@TC = 25 °C)
Derating Factor above 25 °C
Operating Junction Temperature & Storage Temperature
Maximum Lead Temperature for soldering purpose,
1/8 from Case for 5 seconds.
Thermal Characteristics
(Note 1)
(Note 2)
(Note 1)
(Note 3)
Value
600
4
2.5
16
±30
262
3.3
4.5
33
0.26
- 55 ~ 150
300
Units
V
A
A
A
V
mJ
mJ
V/ns
W
W/°C
°C
°C
* Ensure that the channel temperature does not exceed 150
Symbol
RθJC
RθJA
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
Min.
-
Value
Typ.
-
-
Max.
3.79
62.5
Units
°C/W
°C/W
Mar, 2005. Rev. 1.
Copyright@ D&I Semiconductor Co., Ltd., Korea. All rights reserved.
1/7
1 page  
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Fig. 12. Gate Charge Test Circuit & Waveforms
DFF4N60
12V 200nF 50KO
Same Type
as DUT
VGS
300nF
VGS
VDS
Qgs
DUT
1mA
Qg
Qgd
Charge
Fig 13. Switching Time Test Circuit & Waveforms
VDS
10V
Pulse
RG
Generator
RL
VDD
(0.5 rated VDS)
DUT
VDS 90%
Vin 10%
td(on)
tr
ton
td(off)
tf
toff
Fig 14. Unclamped Inductive Switching Test Circuit & Waveforms
10V
VDS
ID
RG
L
DUT
VDD
1 BVDSS
EAS = LL IAS2
2 BVDSS - VDD
BVDSS
IAS
ID(t)
tp
VDS(t)
Time
5/7
5 Page | ||
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| PDF Descargar | [ Datasheet DFF4N60.PDF ] | |
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