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PDF C5346 Data sheet ( Hoja de datos )
| Número de pieza | C5346 | |
| Descripción | NPN Transistor - 2SC5346 | |
| Fabricantes | Panasonic Semiconductor | |
| Logotipo |  |
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2SC5346
Silicon NPN epitaxial planer type
For low-frequency high breakdown voltage amplification
Complementary to 2SA1982
s Features
q Satisfactory linearity of forward current transfer ratio hFE.
q High collector to emitter voltage VCEO.
q Small collector output capacitance Cob.
6.9±0.1
0.7 4.0
Unit: mm
1.05 2.5±0.1
±0.05
(1.45)
0.8
0.65 max.
s Absolute Maximum Ratings (Ta=25˚C)
Parameter
Symbol
Ratings
Unit
Collector to base voltage
VCBO
150
V
Collector to emitter voltage VCEO
150
V
Emitter to base voltage
VEBO
5
V
Peak collector current
ICP
100 mA
Collector current
IC
50 mA
Collector power dissipation PC*1
1.0
W
Junction temperature
Tj
150 ˚C
Storage temperature
Tstg –55 ~ +150 ˚C
*1 Printed circuit board: Copper foil area of 1cm2 or more, and the board
thickness of 1.7mm for the collector portion
s Electrical Characteristics (Ta=25˚C)
+0.1
0.45–0.05
2.5±0.5 2.5±0.5
123
Note: In addition to the
lead type shown in
the upper figure, the
type as shown in
the lower figure is
also available.
1:Emitter
2:Collector
3:Base
MT2 Type Package
1.2±0.1
0.45+–00..105
0.65
max.
(HW type)
Parameter
Symbol
Conditions
min typ max Unit
Collector cutoff current
ICBO VCB = 100V, IE = 0
1 µA
Collector to emitter voltage
Emitter to base voltage
Forward current transfer ratio
VCEO
VEBO
hFE*1
IC = 0.1mA, IB = 0
IE = 10µA, IC = 0
VCE = 5V, IC = 10mA
150 V
5V
130 330
Collector to emitter saturation voltage VCE(sat)
IC = 30mA, IB = 3mA
1V
Noise voltage
NV VCE = 10V, IC = 1mA, GV = 80dB
Rg = 100kΩ, Function = FLAT
150 300 mV
Transition frequency
fT VCB = 10V, IE = –10mA, f = 200MHz
160 MHz
Collector output capacitance
Cob
VCB = 10V, IE = 0, f = 1MHz
5 pF
*1hFE Rank classification
Rank
R
S
hFE 130 ~ 220 185 ~ 330
1
1 page | ||
| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet C5346.PDF ] | |
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