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Teilenummer | DF2S5.6FS |
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Beschreibung | Diodes | |
Hersteller | Toshiba | |
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Gesamt 3 Seiten www.DataSheet4U.com
TOSHIBA Diodes for Protecting against ESD Epitaxial Planar Type
DF2S5.6FS
Diodes for Protecting against ESD
DF2S5.6FS
The mounting of four devices on an ultra-compact package allows the
number of parts and the mounting cost to be reduced.
Zener voltage corresponds to E24 series.
Lead (Pb) - free
Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Power dissipation
P 150*
Junction temperature
Tj 150
Storage temperature range
Tstg −55~150
*: Mounted on a glass epoxy circuit board of 20 × 20 mm,
pad dimension of 4 × 4 mm.
Pad Dimension(Reference) Unit : mm
0.85
0.26
0.21
Unit
mW
°C
°C
Unit in mm
0.6±0.05
A
0.2
0.07M A ±0.05
0.1±0.05
0.48+-00..0032
fSC
JEDEC
JEITA
TOSHIBA
―
―
1-1L1A
Weight: 0.0006 g (typ.)
Electrical Characteristics (Ta = 25°C)
Characteristic
Zener voltage
Dynamic impedance
Reverse current
Total capacitance
(between Cathode and Anode)
Symbol
VZ
ZZ
IR
CT
Test Condition
IZ = 5mA
IZ = 5mA
VR = 3.5V
VR = 0 V, f = 1 MHz
Min Typ. Max Unit
5.3 5.6 6.0
V
― ― 30 Ω
― ― 1 μA
― 40 ― pF
Guaranteed Level of ESD Immunity
Test Condition
ESD Immunity Level
IEC61000-4-2
(Contact discharge)
±30kV
Criterion: No damage to device elements
Marking Equivalent Circuit (Top View)
.6
1 2005-08-29
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Seiten | Gesamt 3 Seiten | |
PDF Download | [ DF2S5.6FS Schematic.PDF ] |
Teilenummer | Beschreibung | Hersteller |
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